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Datasheet 2N6468 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N6468 | SILICON PNP POWER TRANSISTOR 2N6468
SILICON PNP POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6468 is a silicon PNP power transistor mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 | Central Semiconductor | transistor |
2 | 2N6468 | Bipolar PNP Device 2N6468
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
1
14.48 (0.570) 14.99 (0.590)
2
0.71 (0.028) 0.86 (0.034)
B | Seme LAB | data |
3 | 2N6468 | (2N6467 / 2N6468) Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6467 2N6468
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Complement to type 2N6465 2N6466 APPLICATIONS ·For use in audio amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Bas | SavantIC | transistor |
4 | 2N6468 | Trans GP BJT PNP 120V 4A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor | data |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact Unisonic Technologies mosfet | | |
2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte Central Semiconductor transistor | | |
7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge ON Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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