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MBR360 데이터시트 PDF




Motorola Semiconductors에서 제조한 전자 부품 MBR360은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 MBR360 기능
기능 Axial Lead Rectifiers
제조업체 Motorola Semiconductors
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MBR360 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBR320/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
Extremely Low vF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode indicated by Polarity Band
Marking: B320, B330, B340, B350, B360
MAXIMUM RATINGS
MBR320
MBR330
MBR340
MBR350
MBR360
MBR340 and MBR360 are
Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40, 50, 60 VOLTS
CASE 267–03
PLASTIC
Rating
Symbol MBR320 MBR330 MBR340 MBR350 MBR360 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, TA = 65°C
(RθJA = 28°C/W, P.C. Board Mounting, see Note 3)
Non–Repetitive Peak Surge Current (2)
(Surge applied at rated load conditions, half wave,
single phase 60 Hz, TL = 75°C)
Operating and Storage Junction
Temperature Range (Reverse Voltage applied)
VRRM
VRWM
VR
IO
IFSM
20
TJ, Tstg
30 40 50
3.0
80
*65 to 150°C
60 V
A
A
°C
Peak Operating Junction Temperature
TJ(pk)
150
°C
(Forward Current applied)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient (see Note 3, Mounting Method 3)
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol MBR320
MBR330
RθJA
28 °C/W
MBR340 MBR350 MBR360 Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
vF
Maximum Instantaneous Reverse Current @ Rated dc
Voltage (1)
TL = 25°C
TL = 100°C
iR
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
0.500
0.600
0.850
0.60
20
0.600
0.740
1.080
V
mA
Rev 1
©RMeoctotriofilea,rInDce. 1v9ic96e Data
1




MBR360 pdf, 반도체, 판매, 대치품
MBR320 MBR330 MBR340 MBR350 MBR360
NOTE 1 — MOUNTING DATA
Data shown for thermal resistance junction–to–ambient (RθJA)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR RθJA IN STILL AIR
Mounting
Method
Lead Length, L (in)
1/8 1/4 1/2 3/4
RθJA
1 50 51 53 55 °C/W
2 58 59 61 63 °C/W
3 28 °C/W
Mounting Method 1
P.C. Board where available
copper surface is small.
ÉÉÉÉÉÉÉÉL ÉÉÉÉÉÉÉÉL ÉÉÉÉÉÉ
Mounting Method 2
Vector Push–In
Terminals T–28
ÉÉÉÉÉÉÉÉL ÉÉÉÉÉÉÉÉÉÉLÉÉÉÉÉÉ
Mounting Method 3
P.C. Board with
2–1/2X 2–1/2
copper surface.
ÉÉ L = 1/2’’
ÉÉÉÉÉÉÉÉÉÉÉÉ Board Ground Plane
4 Rectifier Device Data

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