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부품번호 | BCY58 기능 |
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기능 | TRANSISTOR | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 5 페이지수
BCY58
BCY59
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCES
BCY BCY
58 59
32 45
32 45
VEBO
ic
PD
pd
7
0.2
0.6
2.28
1
6.67
Tj. T stg -65 to +200
Symbol
Rfljc
R#ja
Max
150
450
Unit
Vdc
Vdc
Vdc
Amp
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Type
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, Ic = 0)
BCY58
BCY59
V(BR)CEO
Emitter-Base Breakdown Voltage
(IE = 1nAdc, Ic = 0)
all V(BR)EB0
Collector Cutoff Current
(V C E = 32 V)
(V C E = 45 V)
(VC E = 32 V, TA = 100°C, V B E = 0.2 V)
(VcE = 45 V, Ta = 100°C, Vbe = 0.2 V)
(V C E = 32 V, T A = 150°)
(VcE = 45 V, Ta = 150°)
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
ices
icex
ices
Emitter Base Cutoff Current
(V E B = 5 V)
ON CHARACTERISTICS
all iebo
DC Current Gain
dC = 10 uAdc, Vce = 5 Vdc)
(IC = 2 mAdc, Vce = 5 Vdc)
(IC = 10 mAdc, Vce = 1 Vdc)
(IC = 100 mAdc, Vce = 1 Vdc)
BCY59-VII, BCY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
BCY59-VII, BCY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
BCY59-VII, BCY58-VII
BCY59-VII1, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
BCY59-VII, BCY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
hFE
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 2.5 mAdc)
(IC = 10 mAdc, Ib = 0.25 mA)
Base-Emitter Saturation Voltage
dC = 10 mA, Ib = 0.25 mA)
(IC = 100 mA, Ib = 2.5 mA)
Base-Emitter on Voltage
(IC = 2 mAdc, VcE = 5 Vdc)
VCE(sat)
all
VBE(sat)
all
VBE(on)
all
Min
32
45
7
20
40
100
120
180
250
380
80
120
160
240
40
45
60
60
0.15
0.05
0.6
0.75
0.55
Typ
0.2
0.2
0.2
0.5
145
220
300
170
250
350
500
190
260
380
550
0.30
0.12
0.70
0.90
0.62
10
10
20
20
10
10
10
220
310
460
630
400
630
1000
0.70
0.35
0.85
1.2
0.70
Vdc
Vdc
nAdc
LiAdc
uAdc
nAdc
Vdc
Vdc
Vdc
4-210
—
:1
BCY58, BCY59
FIGURE 5 - SATURATION VOLTAGE
t
1
100°C
1
25 °C
— —-55 °C
i
V C E( sat) lc/lB =<
1
^>^
i-'"^
10° 10'
IC, COLLECTOR CURRENT (mA)
FIGURE 7 - INPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
'
,'
VCE = 5V
0.6 0.7 0.8 0.9
Vbe. BASE EMITTER VOLTAGE (VOLTS)
FIGURE 9 - OUTPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
4»iA
3.5 jjA
3 mA
2.5 MA
ZM
1.5 >iA
" "1
120.5 <iA
1
34
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
FIGURE 6 - SATURATION VOLTAGE
Ta = 25°cJ/
/•
VBElsat IC/lB = 40
10° 10'
IC, COLLECTOR CURRENT (mA)
1 = 100T
T
T
t
1
10?
FIGURE 8 - OUTPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
^ —1
lB= 25wA
/ s~
I
Y^
lB= 20nA
1
lB= 16/uA
/' IB = 10mA
/
/
pi's
11
5mA
Vce. COLLECTOR-EMITTER VOLTAGE (VOLTS)
FIGURE 10 - OUTPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
^< p1UU 0.50 mA
0.46 mA
- 0.35 mA |
0.30 mA
|
-0.25 mA
I
0.20 mA
bU
I
0.10 mA
I
0.05 mA
Vce. COLLECTOR EMITTER VOLTAGE (VOLTS)
4-213
4페이지 | |||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |