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Número de pieza | J113 | |
Descripción | JFET CHOPPER | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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J112
J113
CASE 29-02, STYLE 5
TO-92 (TO-226AA)
JFET
CHOPPER
—N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation T/\ = 25°C
Derate above 25°C
Lead Temperature
Operating and Storage Junction
Temperature Range
Symbol
VDG
Vgs
'G
PD
tl
TJ- T stg
Value
-35
-35
50
625
5.68
300
- 55 to + 1 50
Unit
Vdc
Vdc
mA
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS <TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
G(l = -1.0 /iA)
Gate Reverse Current
(V GS = - 15 V)
Gate Source Cutoff Voltage
(V DS = 5.0 V, Dl = 1.0 mA)
Jill
J112
J113
Drain-Cutoff Current
(V DS = 5.0 V, V GS
-10 V)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current*
(VDS = 15 V)
J111
J112
J113
Static Drain-Source On Resistance
(V DS = 0.1 V)
J111
J112
J113
Drain Gate and Source Gate On-Capacitance
(Vqs = V GS = 0, f = 1.0 MHz)
Drain Gate Off-Capacitance
(V GS = -10 V, f = 1.0 MHz)
Source Gate Off-Capacitance
(VGS = -10 V, f = 1.0 MHz)
Pulse Width = 300 /usee. Duty Cycle
Symbol
V(BR)GSS
'GSS
VGS(off)
'D(off)
Min
35
-3.0
-1.0
-0.5
Max
•1.0
-10
-5.0
-3.0
1.0
Unit
Vdc
nA
!DSS
T>S(on)
20
5.0
2.0
c dg(on)
+
c sg(on)
c dg(off)
c sg(off)
Ohms
33
50
100
28 PF
PF
PF
6-108
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet J113.PDF ] |
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