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J111 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 J111
기능 N-Channel JFETs
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J111 데이터시트, 핀배열, 회로
J/SST111 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W)
J/SST111
J/SST112
J/SST113
–3 to –10
–1 to –5
v–3
30
50
100
ID(off) Typ (pA)
5
5
5
tON Typ (ns)
4
4
4
J111 SST111
J112 SST112
J113 SST113
FEATURES
D Low On-Resistance: 111 < 30 W
D Fast Switching—tON: 4 ns
D Low Leakage: 5 pA
D Low Capacitance: 3 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-226AA (TO-92)
D1
S2
G3
Top View
J111
J112
J113
TO-236 (SOT-23)
D1
S2
3G
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
Power Dissipationa
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
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7-1




J111 pdf, 반도체, 판매, 대치품
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100
VDS = 10 V
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz
500
40
10
ID = 1 mA
30 gfs gos
250
20
ID = 10 mA
10
1
10 100 1 k 10 k 100 k
f Frequency (Hz)
10 nA
1 nA
100 pA
10 pA
1 pA
Gate Leakage Current
IGSS @ 125_C
TA = 125_C
ID = 10 mA
1 mA
1 mA
TA = 25_C
10 mA
IGSS @ 25_C
0
0 2 4 6 8
VGS(off) Gate-Source Cutoff Voltage (V)
Common-Gate Input Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
gig
0
10
10
big
1
0.1 pA
0
6 12 18 24
VDG Drain-Gate Voltage (V)
30
Common-Gate Forward Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
gfg
bfg
10
gfg
1
0.1
100
200 500
f Frequency (MHz)
1000
Common-Gate Reverse Admittance
10
VDG = 10 V
ID = 10 mA
TA = 25_C
1.0 brg
grg
0.1
+grg
0.1
100
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7-4
200 500
f Frequency (MHz)
1000
0.01
100
200 500
f Frequency (MHz)
1000
Document Number: 70232
S-04028Rev. E, 04-Jun-01

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