Datasheet.kr   

J111 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 J111
기능 N-Channel JFETs
제조업체 Vishay
로고 Vishay 로고 


전체 6 페이지

		

No Preview Available !

J111 데이터시트, 핀배열, 회로
J/SST111 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W)
J/SST111
J/SST112
J/SST113
–3 to –10
–1 to –5
v–3
30
50
100
ID(off) Typ (pA)
5
5
5
tON Typ (ns)
4
4
4
J111 SST111
J112 SST112
J113 SST113
FEATURES
D Low On-Resistance: 111 < 30 W
D Fast Switching—tON: 4 ns
D Low Leakage: 5 pA
D Low Capacitance: 3 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-226AA (TO-92)
D1
S2
G3
Top View
J111
J112
J113
TO-236 (SOT-23)
D1
S2
3G
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
Power Dissipationa
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
www.vishay.com
7-1




J111 pdf, 반도체, 판매, 대치품
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100
VDS = 10 V
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz
500
40
10
ID = 1 mA
30 gfs gos
250
20
ID = 10 mA
10
1
10 100 1 k 10 k 100 k
f Frequency (Hz)
10 nA
1 nA
100 pA
10 pA
1 pA
Gate Leakage Current
IGSS @ 125_C
TA = 125_C
ID = 10 mA
1 mA
1 mA
TA = 25_C
10 mA
IGSS @ 25_C
0
0 2 4 6 8
VGS(off) Gate-Source Cutoff Voltage (V)
Common-Gate Input Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
gig
0
10
10
big
1
0.1 pA
0
6 12 18 24
VDG Drain-Gate Voltage (V)
30
Common-Gate Forward Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
gfg
bfg
10
gfg
1
0.1
100
200 500
f Frequency (MHz)
1000
Common-Gate Reverse Admittance
10
VDG = 10 V
ID = 10 mA
TA = 25_C
1.0 brg
grg
0.1
+grg
0.1
100
www.vishay.com
7-4
200 500
f Frequency (MHz)
1000
0.01
100
200 500
f Frequency (MHz)
1000
Document Number: 70232
S-04028Rev. E, 04-Jun-01

4페이지













구       성총 6 페이지
다운로드[ J111.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
J110

N-channel silicon junction FETs

NXP
NXP
J110

N-Channel Switch

Fairchild Semiconductor
Fairchild Semiconductor

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵