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13N60M2 PDF 데이터시트 ( Data , Function )

부품번호 13N60M2 기능
기능 N-CHANNEL POWER MOSFET
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13N60M2 데이터시트, 핀배열, 회로
STF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
2
Power MOSFETs in TO-220FP and I PAKFP packages
Datasheet production data
Features
3
2
1
TO-220FP
1
23
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
AM15572v1
Order codes VDS @ TJmax RDS(on) max ID
STF13N60M2
STFI13N60M2
650 V
0.38 Ω 11 A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF13N60M2
STFI13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220FP
2
I PAKFP (TO-281)
Packaging
Tube
March 2014
This is information on a product in full production.
DocID023939 Rev 4
1/14
www.st.com
14




13N60M2 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STF13N60M2, STFI13N60M2
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source
on-resistance
VGS = 10 V, ID = 5.5 A
Min. Typ. Max. Unit
600 V
1 μA
100 μA
±10 μA
2 3 4V
0.35 0.38 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 580 - pF
- 32 - pF
- 1.1 - pF
(1) Equivalent output
Coss eq. capacitance
VDS = 0 to 480 V, VGS = 0
- 120 - pF
Intrinsic gate
RG resistance
f = 1 MHz open drain
- 6.6 - Ω
Qg Total gate charge
VDD = 480 V, ID = 11 A,
Qgs
Gate-source charge
VGS = 10 V (see Figure 15)
Qgd Gate-drain charge
- 17 - nC
- 2.5 - nC
- 9 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD = 300 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Min. Typ. Max. Unit
- 11 - ns
- 10 - ns
- 41 - ns
- 9.5 - ns
4/14 DocID023939 Rev 4

4페이지










13N60M2 전자부품, 판매, 대치품
STF13N60M2, STFI13N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
VDS
10
VDD=480V
ID=11A
AM15716v1
VDS
(V)
500
8 400
6 300
4 200
2 100
Figure 9. Capacitance variations
C
(pF)
AM15717v1
1000
Ciss
100
Coss
10
1 Crss
00
0 4 8 12 16 Qg(nC)
0.1
0.1
1
10 100 VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
AM15718v1
1.1 ID=250µA
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
ID=5.5 A
VGS=10V
AM15719v1
1.0
1.7
0.9
1.3
0.8
0.7 0.9
0.6
-50
0
50 100 TJ(°C)
0.5
-50
0
50 100 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD (V)
1
TJ=-50°C
AM15720v1
0.9 TJ=25°C
0.8
0.7 TJ=150°C
0.6
Figure 13. Output capacitance stored energy
Eoss(µJ)
AM15721v1
4
3
2
1
0.5
0 2 4 6 8 10 ISD(A)
0
0 100 200 300 400 500 VDS(V)
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