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부품번호 | 2N5745 기능 |
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기능 | PNP Silicon High-Power Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
ON Semiconductort
PNP Silicon High-Power
Transistors
. . . designed for use in power amplifier and switching circuits.
• Low Collector–Emitter Saturation Voltage —
IC = 15 Adc, VCE(sat)
= 1.0 Vdc (Max) 2N4398,99
= 1.5 Vdc (Max) 2N5745
• DC Current Gain Specified —
= 1.0 to 30 Adc
• Complements to NPN 2N5301, 2N5302, 2N303
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol 2N4398 2N4399 2N5745 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TA = 25_C**
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
40 60 80 Vdc
40 60 80 Vdc
5.0 Vdc
30 30 20 Adc
50 50 50
7.5 Adc
15
5.0
28.6
200
1.15
–65 to +200
Watts
mW/_C
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
θJC
θJA
0.875
35
_C/W
_C/W
* Indicates JEDEC Registered Data.
** ON Semiconductor guarantees this data in addition to JEDEC Registered Data.
2N4398
2N4399
2N5745
20, 30 AMPERE
POWER TRANSISTORS
PNP SILICON
40–60–180 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N4398/D
2N4398 2N4399 2N5745
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS — continued
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 10 Vdc,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎf = 1.0 MHz)
2N4398, 2N4399
2N5745
fT
MHz
4.0 —
2.0 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTIC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
(VCC = 30 Vdc,
IC = 10 Adc,
IB1 = IB2 = 1.0 Adc)
hfe
2N4398, 2N4399
2N5745
2N4396, 2N4399
2N5745
2N4398, 2N4399
2N5746
tr
ts
tf
40 — —
— 0.4 µs
— 1.0
— 1.5 µs
— 2.0
— 0.6 µs
— 1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(2) fT is defined as the frequency at which |hfe| extrapolates to unity.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ā2.0 V
0
10
RB
tr ≤
20 ns
-11 V
10 to 100 µs
DUTY CYCLE ≈ 2.0%
VCC -ā30 V
RL 3.0
TO SCOPE
tr ≤ 20 ns
Figure 2. Turn–On Time
VCC -ā30 V
RL 3.0
+ā9.0 V
10
0 TO SCOPE
RB tr ≤ 20 ns
-11 V
tr ≤ 20 ns
10 to 100 µs
VBB +ā4.0 V
DUTY CYCLE ≈ 2.0%
Figure 3. Turn–Off Time
http://onsemi.com
4
4페이지 E
V
H
2N4398 2N4399 2N5745
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
C
–T–
SEATING
PLANE
D 2 PL
K
0.13 (0.005) M T Q M Y M
U
L
–Y–
2
GB
1
–Q–
0.13 (0.005) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
INCHES
DIM MIN MAX
A 1.550 REF
B --- 1.050
C 0.250 0.335
D 0.038 0.043
E 0.055 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N --- 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
--- 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
--- 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
http://onsemi.com
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2N5740 | (2N5739 / 2N5740) Silicon PNP Power Transistors | SavantIC |
2N5740 | Bipolar PNP Device | Seme LAB |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |