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PDF 2N918 Data sheet ( Hoja de datos )
| Número de pieza | 2N918 | |
| Descripción | NPN SILICON PLANAR RF TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N918 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR RF TRANSISTOR
2N918
TO-72
Metal Can Package
NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF AND VHF
AMPLIFIER MIXER AND OSCILLATOR APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Base Voltage
VCBO
30
Collector Emitter Voltage
VCEO
15
Emitter Base Voltage
VEBO
3
Collector Current (Continuous)
IC
50
Total Power Dissipation @ Ta=25ºC
PD
200
Derate above 25ºC
1.14
Total Device Dissipation@ Tc=25ºC
PD
300
Derate Above 25ºC
1.71
Operating & Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter (sus) Voltage
BVCEO(sus) IC=3mA, IB=0
Collector Base Breakdown Voltage
BVCBO IC=1µA, IE=0
Emitter Base Breakdown Voltage
BVEBO IE=10µA, IC=0
Collector Cut off Current
ICBO VCB=15V, IE=0
VCB=15V, IE=0, Ta=150ºC
Collector Emitter (Sat) Voltage
VCE(Sat) IC=10mA, IB=1mA
Base Emitter (Sat) Voltage
VBE(sat) IC=10mA, IB=1mA
DC Current Gain
hFE IC=3mA,VCE=1V
MIN
15
30
3.0
20
DYNAMIC CHARACTERISTICS
TYP
MAX
10
10
0.4
1.0
UNIT
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
UNIT
V
V
V
nA
µA
V
V
Out Put Capacitance
Input Capacitance
High Bandwidth Product
Noise Figure
Cob VCB=10V, IE=0, f=140kHz
VCB=0, IE=0, f=140kHz
Cib VEB=0.5V, IC=0,f=140kHz
fT IC=4mA,VCE=10V, f=10MHz 600
NF IC=1mA, VCE=6V
RG=400Ω, f=60MHz
1.7 pF
3.0 pF
2.0 pF
MHz
6.0 dB
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N918.PDF ] | |
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