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PDF 2N918 Data sheet ( Hoja de datos )
| Número de pieza | 2N918 | |
| Descripción | NPN SILICON RF TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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2N918
NPN SILICON RF TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N918 type
is an NPN silicon RF transistor, manufactured by
the epitaxial planar process and designed for high
frequency amplifier and oscillator applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
30
15
3.0
50
200
300
-65 to +200
87.5
58.3
UNITS
V
V
V
mA
mW
mW
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=15V
ICBO
VCB=15V, TA=150°C
BVCBO
IC=1.0μA
30
BVCEO
IC=3.0mA
15
BVEBO
IE=10μA
3.0
VCE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=10mA, IB=1.0mA
hFE VCE=1.0V, IC=3.0mA
20
fT
VCE=10V, IC=4.0mA, f=100MHz
600
Cob VCB=10V, IE=0, f=1.0MHz
Cob VEB=0, IE=0, f=1.0MHz
Cib VEB=0.5V, IC=0, f=1.0MHz
Po
VCB=15V, IC=8.0mA, f=500MHz
30
Gpe
VCB=12V, IC=6.0mA, f=200MHz
15
VCB=15V, IC=8.0mA, f=500MHz
25
NF VCE=6.0V, IC=1.0mA,
RG=400Ω, f=60kHz
MAX
10
1.0
0.4
1.0
1.7
3.0
2.0
6.0
UNITS
nA
μA
V
V
V
V
V
MHz
pF
pF
pF
mW
dB
%
dB
R1 (11-September 2012)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N918.PDF ] | |
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