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부품번호 | 2N918 기능 |
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기능 | NPN LOW POWER SILICON TRANSISTOR | ||
제조업체 | Microsemi | ||
로고 | |||
전체 4 페이지수
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DEVICES
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/301
2N918 2N918UB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C (1)
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
Top & Tstg
Note: 1) Derate linearly 1.14mW/°C above TA > 25°C
Value
15
30
3.0
50
200
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 3mAdc
Collector-Base Cutoff Current
VCB = 30Vdc
VCB = 25Vdc
VCB = 25Vdc; TA = +150°C
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 2.5Vdc
Forward-Current Transfer Ratio
IC = 0.5mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 1.0Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 1.0Vdc; TA = -55°C
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
Base-Emitter Voltage
IC = 10mAdc, IB = 1.0mAdc
V(BR)CEO
15
Vdc
ICBO
1.0 µAdc
10 ηAdc
1.0 µAdc
IEBO 10 µAdc
10 ηAdc
hFE
VCE(sat)
VBE(sat)
10
20 200
20
10
0.4 Vdc
1.0 Vdc
TO-72
2N918
3 PIN
2N918UB
T4-LDS-0010 Rev. 3 (101342)
Page 1 of 4
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
Inches
Min Max
.046 .056
Millimeters
Min Max
1.17 1.42
.115 .128 2.92 3.25
.085 .108 2.16 2.74
.128 3.25
.108 2.74
.022 .038 0.56 0.97
.017 .035 0.4. 0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
Inches
Min Max
.036 .040
Millimeters
Min Max
0.91 1.02
.071 .079
1.80
2.01
.016 .024
0.41
0.61
.008 .203
.012 .305
.022 .559
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Lid material: Kovar.
5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions for 2N918UB, surface mount.
T4-LDS-0010 Rev. 3 (101342)
Page 4 of 4
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |