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PDF BSV52 Data sheet ( Hoja de datos )
| Número de pieza | BSV52 | |
| Descripción | SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSV52 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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BSV52
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
SWITCHING TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VcEO
vCBO
vEBO •
"C
THERMAL CHARACTERISTICS
Characteristic
•Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
'stg
•Thermal Resistance Junction to Ambient
R 0JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25X unless otherwise noted.)
"
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 1.0 mAdc)
Collector Cutoff Current
(Vcb = 10 Vdc, If = 0)
(VCB = 10 Vdc, lg = 0, TA = 125°C)
ON CHARACTERISTICS
DC Current Gain
dC - 1.0 mAdc, VCE = 1.0 Vdc)
dC = 10 mAdc, Vce = 1.0 Vdc)
dp = 50 mAdc, Vqe = 1.0 Vdc)
Collector-Emitter Saturation Voltage
«C = 10 mAdc, Ib = 300 /aAdc)
dC = 10 mAdc, Bl = 1.0 mAdc)
dp = 50 mAdc, lg = 5.0 mAdc)
Base-Emitter Saturation Voltage
dC = 10 mAdc, Bl = 1.0 mAdc)
dp = 50 mAdc, \q = 5.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
«C = 10 mAdc, Vqe = 10 Vdc)
Output Capacitance
(VCB = 5.0 Vdc, Ig = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 1.0 Vdc, I'c = 0)
SWITCHING CHARACTERISTICS
Storage Time
dc = 'B = 'BM = 10 mAdc)
Turn-On Time
(VBE = 15 Vdc, lc = 10 mAdc, Bl = 3.0 mAdc)
Turn-Off Time
dp = 10 mAdc, Ib = 3.0 mAdc)
Symbol
v(BR)CEO
'CBO
12
hFE
v CE(sat)
25
40
25
v BE(sat)
*T 400
Qbo
loff
Value
12
Max
350
2.8
150
357
100
5.0
120
300
250
400
850
1200
4.0
13
Vdc
Vdc
Vdc
Unit
mW
mW/°C
°C/W
Vdc
nAdc
/xAdc
mVdc
mVdc
MHz
PF
PF
3-42
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSV52.PDF ] | |
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