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PDF BSX39 Data sheet ( Hoja de datos )
| Número de pieza | BSX39 | |
| Descripción | SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BSX39
MAXIMUM RATINGS
Rating
Collector-Emitter Voftage
—Collector Current Continuous
Symbol
VCEO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, T/\ = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
RflJA
•Package mounted on 99.5% alumina 10 x.8 x 0.6 mm:
Value
14
200
Max
350
2.8
150
357
Unit
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 2.0 mA)
Collector Cutoff Current
(VC B - 12 V)
Collector Cutoff Current
(VCE = 12 V)
(VCE = 12V,Tj = 125°C)
ON CHARACTERISTICS
DC Current Gain
C(I = 1.0 mA, VC E = 1-0 V)
C(I = 10mA,VcE = 10 V)
C(| = 50 mA, Vqe = 10V)
Collector-Emitter Saturation Voltage
(IC = 10 mA, i'b = 10 mA)
(IC = 50 mA, Ib = 5.0 mA)
Base-Emitter Saturation Voltage
dC = 10 mA, Ib = 1-0 mA)
C(I = 50 mA, Ib = 5.0 mA)
SWITCHING CHARACTERISTICS
Turn-On Time
(IC = 10 mA, Ib = 3.0 mA)
Turn-Off Time
dC
=
10 mA, Ibi
=
'B2
=
30 mA
>
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
SWITCHING TRANSISTOR
NPN SILICON
Symbol
V(BR)CEO
ICBO
Ices
Min
14
hFE
VcE(sat)
v BE(sat)
25
40
25
700
Max
100
100
5.0
200
250
400
850
1.2
Unit
Vdc
nA
nA
yJK
mV
mV
V
toff
3-43
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSX39.PDF ] | |
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