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PDF BSS71 Data sheet ( Hoja de datos )

Número de pieza BSS71
Descripción SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Fabricantes TT 
Logotipo TT Logotipo



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No Preview Available ! BSS71 Hoja de datos, Descripción, Manual

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
High Voltage
Hermetic TO-18 Metal package.
Ideally suited for High Voltage Amplifier
and Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
200V
VCEO
Collector – Emitter Voltage
200V
VEBO
Emitter – Base Voltage
6V
IC Continuous Collector Current
500mA
PD Total Power Dissipation at TA = 25°C
500mW
Derate Above 25°C
2.86mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
Max.
350
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 8576
Website: http://www.semelab-tt.com
Issue 2
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