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PDF 2N3997 Data sheet ( Hoja de datos )
| Número de pieza | 2N3997 | |
| Descripción | NPN POWER SWITCHING SILICON TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3997 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
DEVICES
2N3996
2N3997
2N3998
2N3999
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25°C (2)
@ TC = +100°C (3)
VCEO
VCBO
VEBO
IB
IC
PT
Operating & Storage Junction Temperature Range
TJ, Tstg
Thermal Resistance, Junction-to-Case
RθJC
Note:
(1) This value applies for Tp ≤ 1.0ms, duty cycle ≤ 50%
(2) Derate linearly 11.4 mW/°C for TA > +25°C
(3) Derate linearly 300 mW/°C for TC > +100°C
Value
80
100
8.0
0.5
10 (1)
2.0
30
-65 to +200
3.33
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min.
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 50mAdc
Collector-Emitter Breakdown Voltage
IC = 10µAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc
Collector-Emitter Cutoff Current
VCE = 80Vdc, VBE = 0V
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 8.0Vdc
V(BR)CEO
80
V(BR)CBO
100
ICEO
ICES
IEBO
Max.
10
200
200
10
Unit
Vdc
Vdc
µAdc
ηAdc
ηAdc
µAdc
TO-111
2N3996, 2N3997
TO-59
2N3998, 2N3999
T4-LDS-0165 Rev. 1 (100688)
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N3997.PDF ] | |
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