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PDF MFE209 Data sheet ( Hoja de datos )
| Número de pieza | MFE209 | |
| Descripción | N-Channel Dual Gate MOSFET | |
| Fabricantes | New Jersey Semi-Conductor | |
| Logotipo |  |
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One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MFE209
MAXIMUM RATINGS
N-CHANNEL DUAL-GATE
SILICON-NITRIDE PASSIVATED
MOS FIELD-EFFECTTRANSISTOR
Rating
Symbol
Value
Unit
Drain-Source Voltage
Drain. Gate Voltage
Gate Current
Drain Current — Continuoui
Total Power Dissipation fe TA = 26'C
Derate above 25°C
VDSX
VDGI
VDG2
IGIR
IGIF
IQ2R
'G2F
ID
PD
20
30
30
-10
10
10
30
300
1.71
Vdc
Vdc
mAdc
mAdc
mW
mW-'C
Storage Channel Temperature Range
Operating Channel Temperature
Lead Temperature, 1/16* From Seated
Surface for 10 Seconds
TSIB
Tchannel
TL
-65to +200
200
260
°C
°c
"C
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
TO-72
ELECTRICAL CHARACTERISTICS <TA = 2S'C unlns otherwise noted.)
Characterise
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(Id = 10/iAdc, VGIS - ~4-° Vdc, VQ2S = 4-0 Vdc)
Gate 1 — Source Breakdown Voltage
IIQ1 - 10 mAdc, VQ2S - VDS = °>
Gate 1 — Source Reverse Breakdown Voltage
HGI - -10 mAdc, VQ2S • VDS • o)
V(BR)DSX
VIBRIGISSF
VIBRIGISSR
Gate 2 -~ Source Forward Breakdown Voltage
(|Q2 f' 10 mAdc, VQIS " VDS - 0)
Gate 2 — Source Reverie Breakdown Voltage
(|Q2 - -10 mAdc, VQIS - VDS • 0)
V(BRIG2SSF
V(BR)G2SSR
Gate 1 — Source Cutoff Voltage
(VDS • "> Vdc, VQ2S * *-° Vdc, ID " 50 nAdc)
VGIS(off)
Gate 2 — Source Cutoff Voltage
(vDs • 15 vdc, VQIS • o, i0 - so ^Adc)
VG2S(oH)
Gate 1 — Terminal Forward Current
(VQJS .. 6.0 vdc,vG2s - VDS=• 01
'G1SSF
Gate 1 — Terminal Reverse Current
(VGIS - '-16.0 vdc, VQ2S f VDS • o)
(VGIS - -fl.o-vdc, yeas • VDS - o, TA - iwo
'G1SSR
Gate 2 — Terminal Forward Current
(vG2S'- 6.0 vdc, VGIS - VDS - 01
Gate 2 — Terminal Reverse Current
((vVQG22SS•«= --66..00 vVddcc,, VVGGIISS -• VVDDSS-*01o. TA » iso-ci
'G2SSF
IQ2SSR
ON CHARACTERISTICS
Gate 1 — Zero Voltage Drain Current
(VDS • IS Vdc, V(jis - 0,VQ2S • *-0 Voo)
SMALL-SIGNAL CHARACTERISTICS
IDSS
Forward Transfer Admit'iiru.r
WDS 1& Vdc, V^2S 4 o vdc,ID
10 mAdc. f - 10 kHz)
Input Capacitance
(Vos « i & V * - '^lkj..
JO Vrtr. ID •iOmArtc >
1.0 MHz)
Reverse Transfer Cao<*C'
IVDS -5 vdc v,,^, j u vdc. ID - 5 0 mAdc f 1.0 MHz)
iVfs
r c,sb
c,ss
Output Capacirance
(VDS = 15 Vdc, VG2s 4 o vdc.ID ~ 5.0 mAdc. f 1,0MHz)
Common-Source Noise igure (FtQufe 1 1
(VDS = isvdc, vG2S ' 4 o vdc. ID •= 10 mAdc, f - 500MHz)
COSs
NF
Common-Source Power Ga«> (Figure 11)
(VDS = iavdc, vG2S
10 mAdc, f * 500MHz)
Gps
Bandwidth
(VDS - ^ vdc,VQ2s 4 0 Vdc, ID ' 10 mAdc. f = 500MHz)
BW
Mfn
20
7,0
-7.0
7.0
-7.0
01
•0.1
--
-
—
-
5.0
,0
—
0,005
05
—
10
7.0
Typ
— - Vdc
— I- n — Vdc
— 22 Vdc
22 Vdc
22 Vdc
"Yo 'n
_
i
10 vdc
— 20 nAdc
- -20 nAdc
-10 MAdc
— 20 nAdc
- ••20 nAdc
-10 MAdc
— 30 mAdc
,3
«S
0023
>H
I
0 03 i pF
20
45 t
13
0
0
0
pF
dB
dB
—1
1
7
MHz
^Ji: MilMK AND NOTES ASSOCMEO WITH TOH
AtJBK
Quality Semi-Condoctors
1 page | ||
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| PDF Descargar | [ Datasheet MFE209.PDF ] | |
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