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PDF BSX20 Data sheet ( Hoja de datos )
| Número de pieza | BSX20 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tq = 25°C
Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCER
Value
15
20
Unit
Vdc
Vdc
VCBO
VEBO
ic
PD
pd
Tj. T s tg
40
4.5
360
2.06
1.2
6.85
-65 to +200
Vdc
Vdc
mAmp
mWatt
mW/°C
Watt
mW/°C
°C
Symbol
RfcUC
Max
146
Unit
°C/W
ELECTRICAL CHARACTERISTICS 0a = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, Ib = 0)
(IC = 10 mAdc, RBE = 10 Q)
Emitter-Base Breakdown Voltage
(IE = 10 nAdc, Ic = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VcB = 20 Vdc, IE = 0, Tj = 150°C)
Collector Cutoff Current
(Vce = 1 5 Vdc, Vbe = 0, Tj = 55°C)
(VcE = 40 Vdc, Vbe = 0)
Cutoff Current
(VcE = 1 5 Vdc, Vbe = - 3 V, Tj = 55°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1 Vdc)
dC = 10 mAdc, VcE = 1 Vdc, Tj = -55°C)
(IC = 1 00 mAdc, Vce = 2 Vdc)
Base-Emitter On Voltage
dC = 30 (iAdc, VcE = 20 Vdc, Tj = 1 00°C)
Emitter-Collector Saturation Voltage
(IC = 10 mAdc, Ib = 0.3 mAdc)
(IC = 10 mAdc, Ib = 1 mAdc)
(IC = 100 mAdc, Ib = 10 mAdc)
Emitter-Base Saturation Voltage
(IC = 10 mAdc, Ib = 1 mAdc)
(IC = 100 mAdc, Ib = 10 mAdc)
BSX20
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
TRANSISTOR
NPN SILICON
Symbol Min
V(BR)CEO
V(BR)CER
V(BR)EB0
'CBO
15
20
4.5
ices
ICEX
ibex
hFE
VBE(on)
VCE(sat)
40
20
10
VBE(sat)
0.7
Max
Unit |
Vdc
Vdc
400
30
0.4
1.0
0.6
0.6
nAdc
uAdc
uAdc
uAdc
120
0.35
0.3
0.25
0.60
0.85
1.50
Vdc
Vdc
Vdc
4-245
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BSX20.PDF ] | |
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