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PDF BSX45 Data sheet ( Hoja de datos )
| Número de pieza | BSX45 | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSX45 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCES
VEBO
c
PD
pd
Tj. T s tg
Symbol
R#JC
RflJA
BSX BSX BSX
45 46 47
40 60 80
80 100 120
7
1
1
5.71
5
28.6
-65 to +200
Max
35
200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS <Ta = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(IC = 30 mAdc, Ib = 0)
BSX45
BSX46
BSX47
Collector-Emitter Breakdown Voltage
(IC = 100 uAdc, Vbe = 0)
BSX45
BSX46
BSX47
Emitter-Base Breakdown Voltage
(IE = 100 uAdc, lc = 0)
Emitter Cutoff Current
(Vbe = 5.0 vdc, ic = Q)
Collector Cutoff Current
(Vce = 60 v, vbe = o)
(Vce = so v, vbe = o)
(Vce
=
6°
v
.
VBE
=
0. Tc
=
I 50°Cl
(Vce = so v, vbe = Q- Tc = 1 50°c)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, Vce = 1 -° Vdc)
(IC = 100 mAdc, Vce = 10 Vdc) (1)
(IC = 500 mAdc, Vce = 1.0 Vdc) (1)
bsx45,46
BSX47
BSX45,46
bsx47
Gr. 6
Gr. 10
Gr. 16
Gr. 6
Gr. 10
Gr. 16
Gr. 6
Gr. 10
Gr. 16
Base-Emitter On Voltage
(IC = 1 00 mAdc, Vce = 1 ° Vdc)
(IC = 500 mAdc, Vce = 1 Vdc)
PC = 1 A, Vce = 1-0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 1 Adc, Ib = 100 mAdc)
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
(IC = 50 mAdc, Vce 1 Vdc, f = 20 MHz)
Emitter-Base Capacitance
(Vbe = 0.5 V, f = 1 MHz)
(1) Pulsed: Pulse Duration = 300 us. Duty Cycle = 1%.
4-249
BSX45
BSX46
BSX47
CASE 79, STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to 2N3019 for graphs.
Symbol Min
|
V(BR)CE0
V(BR)CES
V(BR)EB0
40
60
80
80
100
120
lEBO
ices
Max
10
10
10
10
10
Unit |
Vdc
Vdc
Vdc
nAdc
nAdc
uAdc
hFE
VBE(on)
10
15
25
40
63
100
15
25
35
0.75
VEC(sat)
100
160
250
1
1.5
2
MHz
Cib pP
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BSX45.PDF ] | |
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