|
|
PDF 2N1613 Data sheet ( Hoja de datos )
| Número de pieza | 2N1613 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N1613 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
|
No Preview Available !
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(RBE * 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V CER
Value
50
Unit
Vdc
VCBO
VEBO
'C
PD
pd
TJ' Tst g
75
7.0
500
0.8
4.57
3.0
17.15
- 65 to + 200
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
,mW/°C
°C
Symbol
R&jc
Max
58.3
Unit
°C/W
2N1613
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged) 0c = 100 mAdc, Rbe * 10 Ohms)
Collector-Base Breakdown Voltage (lc = 100 //Adc, Ie = 0)
Emitter-Base Breakdown Voltage 0e = 100 ^Adc, lc = 0)
Collector Cutoff Current (Vcb = 60 Vdc, lg = 0)
(VC b = 60 Vdc, El = 0, TA = 150°C)
Emitter Cutoff Current (Veb = 5.0 Vdc, lc = 0)
ON CHARACTERISTICS!!]
DC Current Gain
(lc = 100 ^Adc, Vqe = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)
C(l = 10 mAdc, VCE = 10 Vdc, TA =
dC = 150 mAdc, V C e = 10 Vdc)
dC = 500 mAdc, VC e = 10 Vdc)
-55°C)
Collector-Emitter Saturation Voltage (lc =150 mAdc, IB = 15 mAdc)
Base-Emitter Saturation Voltage (lc = 150 mAdc, Ib == 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(1)
(lC = 50 mAdc, Vce = 10 Vdc, f = 20 MHz)
Output Capacitance
(Vcb
=
1°
vdc
'
Ie
=
0, f
=
100 kHz)
Input Capacitance (Veb = 0.5 Vdc, lc = 0, f = 100 kHz)
Input Impedance
(lc
=
1.0 mAdc, Vcb
=
5.0
vdc
'
f
=
1 -0 kHz)
dC = 5.0 mAdc, Vcb = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio (lc = 1.0 mAdc, Vcb = 5.0 Vdc, f = 1.0 kHz)
(lC = 5.0 mAdc, VC b = 10 Vdc, f = 1.0 kHz)
Small-Signal Current Gain Oc = 1.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
(lC = 5.0 mAdc, VC £ = 10 Vdc, f = 1.0 kHz)
Output Admittance 0c = 1.0 mAdc, Vcb = 5.0 Vdc, f = 1.0 kHz)
dC = 5.0 mAdc, Vcb = 10 Vdc, f = 1.0 kHz)
Noise Figure (lc = 0.3 mAdc, Vce = 1° vd C Rs = 510 Ohms, f = 1.0 kHz,
Bandwidth = 1.0 Hz)
SWITCHING CHARACTERISTICS
Switching Time
(1) Pulse Test: Pulse Width =s 300 ,tis, Duty Cycle =s 2.0%.
Symbol
vCER(sus)
v (BR)CBO
v (BR)EBO
!CBO
!EBO
"FE
v CE(sat)
v BE(sat)
*T
Co bo
Cjbo
hib
"rb
hfe
h ob
NF
td + V + tf
Min
50
75
7.0
—
-
20
35
20
40
20
—
-
60
—
—
24
4.0
—
30
35
0.05
0.05
—
Typ
—
—
—
—
—
35
5—0
80
30
0.3
0.78
-
10
50
—
—
—
—
—
Max
—
—
—
10
10
10
Vdc
Vdc
Vdc
nAdc
/xAdc
nAdc
—
—
120
—
1.5 Vdc
1.3 Vdc
- MHz
25 pF
80 PF
34 Ohms
8.0
3.0 X 10-4
3.0
-100
150
0.5 /umhos
0.5
12 dB
4-21
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N1613.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N1613 | NPN medium power transistor |  Philips |
| 2N1613 | SWITCHES AND UNIVERSAL AMPLIFIERS |  STMicroelectronics |
| 2N1613 | NPN LISICON PLANAR EPITAXIAL TRANSISTORS |  Micro Electronics |
| 2N1613 | NPN Small Signal General Purpose Amplifiers |  Fairchild |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |