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2N2417B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2N2417B
기능 SILICON UNIJUNCTION TRANSISTOR
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2N2417B 데이터시트, 핀배열, 회로
DIGITRON SEMICONDUCTORS
2N2417 - 2N2422, A, B
SILICON UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Power dissipation(1)
PD 350
RMS emitter current
IE 70
Peak pulse emitter current (2) ie 2
Emitter reverse voltage
VB2E
60
Interbase voltage
VB2B1
65
Operating junction temperature range
TJ
-65 to 175
Storage temperature range
Tstg -65 to 175
Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry.
Note 2: Capacitor discharge – 10µF or less, 30 volts or less.
Unit
mW
mA
Amps
Volts
Volts
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Intrinsic standoff ratio
(VB2B1 = 10V) (1)
2N2417, 2N2417A, 2N2417B
2N2418, 2N2418A, 2N2418B
2N2419, 2N2419A, 2N2419B
2N2420, 2N2420A, 2N2420B
2N2421, 2N2421A, 2N2422B
2N2422, 2N2422A, 2N2422B
Interbase resistance
(VB2B1 = 3V, IE = 0)
2N2417, 2N2417A, 2N2417B
2N2418, 2N2418A, 2N2418B
2N2419, 2N2419A, 2N2419B
2N2420, 2N2420A, 2N2420B
2N2421, 2N2421A, 2N2422B
2N2422, 2N2422A, 2N2422B
Emitter saturation voltage
(VB2B1 = 10V, IE = 50mA)(2)
Modulated interbase current
(VB2B1 = 10V, IE = 50mA)
Emitter reverse current
(IB1 = 0)
VB2E = 60V
VB2E = 60V
VB2E = 30V
2N2417, 2N2418, 2N2419, 2N2420,
2N2421, 2N2422
2N2417A, 2N2418A, 2N2419A,
2N2420A, 2N2421A, 2N2422A
2N2417B, 2N2418B, 2N2419B,
2N2420B, 2N2421B, 2N2422B
Peak point emitter current
(VB2B1 = 25V)
2N2417, 2N2418, 2N2419, 2N2420,
2N2421, 2N2422
2N2417A, 2N2418A, 2N2419A,
2N2420A, 2N2421A, 2N2422A
2N2417B, 2N2418B, 2N2419B,
2N2420B, 2N2421B, 2N2422B
Symbol
η
rBB
VEB1(sat)
IB2(mod)
IEB2O
Min
0.51
0.51
0.56
0.56
0.62
0.62
4.7
6.2
4.7
6.2
4.7
6.2
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
3.5
15
-
-
-
Max
0.62
0.62
0.68
0.68
0.75
0.75
6.8
9.1
6.8
9.1
6.8
9.1
-
-
2
2
0.2
IEB2O
- - 12
- - 12
- -6
Valley point current
(VB2B1 = 20V, RB2 = 100ohms)(2)
IV 8 - -
2N2417, 2N2418, 2N2419, 2N2420,
2N2421, 2N2422
---
Base-one peak pulse voltage(3)
2N2417A, 2N2418A, 2N2419A,
2N2420A, 2N2421A, 2N2422A
VOB1
3- -
2N2417B, 2N2418B, 2N2419B,
2N2420B, 2N2421B, 2N2422B
3- -
Note 1: Intrinsic standoff voltage: η = VP-VF/VB2B1, where VP = peak point emitter voltage , VB2B1 = interbase voltage, VF = emitter to base one junction diode drop
(0.45V @ 10µA).
Note 2: PW 300µs, duty cycle 2% to avoid internal heating due to interbase modulation which may result in erroneous readings
Note 3: Base one peak pulse voltage is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Unit
-
-
-
-
-
-
kohms
Volts
mA
µA
µA
mA
V
Rev. 20121019






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관련 데이터시트

부품번호상세설명 및 기능제조사
2N2417

SILICON UNIJUNCTION TRANSISTOR

Digitron Semiconductors
Digitron Semiconductors
2N2417A

SILICON UNIJUNCTION TRANSISTOR

Digitron Semiconductors
Digitron Semiconductors

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