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PDF MQ3725 Data sheet ( Hoja de datos )
| Número de pieza | MQ3725 | |
| Descripción | DUAL AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
MD3725
MD3725F
MQ3725
Derate above 25°C
MD3725
MD3725F
MQ3725
Total Device Dissipation
@ TC = 25°C
MD3725
MD3725F
MQ3725
Derate above 25°C
MD3725
MD3725F
MQ3725
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VCBO
VEBO
"c
pd
Pd
Value
40
65
6.0
1.0
One Die
All Die
Equal Power
Unit
Vdc
Vdc
Vdc
Adc
mW
600
350
400
3.42
2.0
2.28
650
400
600
3.7
2.28
3.42
mW/°C
Watts
TJ' Tstg
2.1
1.25
1.0
3.0
2.5
4.0
12
7.15
5.71
17.2
14.3
22.8
- 65 to + 200
mW/°C
°C
MD3725,F
MQ3725
MD3725
CASE 654-07, STYLE 1
MD3725F
CASE 610A-04, STYLE 1
MQ3725
CASE 607-04, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MD3725
MD3725F
MQ3725
MD3725
MD3725F
MQ3725
Symbol
R 0JC
RftjAd)
Coupling Factor
MD3725
MD3725F
MQ3725 (Q1-Q2)
(Q1-Q3, Q1-Q4>
d) RflJA is measured with the device soldered into a typical printed circuit board.
One Die
All Die
Equal Power
83.3
140
175
58.3
70
43.8
292
500
433
Junction to
Ambient
270
438
292
Junction to
Case
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage(2)
dC = 10 mAdc, Bl = 0)
Collector-Emitter Breakdown Voltage
flC = 10 Mdc, Vbe = 0)
Collector-Base Breakdown Voltage
dC = 100 /uAdc, Ig = 0)
Emitter-Base Breakdown Voltage
(IE = 10 MAdc, lc = 0)
MD3725F
Collector Cutoff Current
(VcB = 40 Vdc, l£ = 0)
(Vcb = 40 Vdc, Ie = 0, TA = 100°C)
Symbol
v (BR)CEO
V (BR)CES
v (BR)CBO
v (BR)EBO
!CBO
Min
40
65
65
6.0
-
Typ
-
—
—
—
0.12
- Vdc
- Vdc
- Vdc
- Vdc
1.7 fiAdc
120 //Adc
5-65
1 page | ||
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| PDF Descargar | [ Datasheet MQ3725.PDF ] | |
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