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2N5547 데이터시트 PDF




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부품번호 2N5547 기능
기능 Monolithic N-Channel JFET Duals
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2N5547 데이터시트, 핀배열, 회로
2N5545/46/47/JANTX/JANTXV
Monolithic N-Channel JFET Duals
Product Summary
Part Number
2N5545
2N5546
2N5547
VGS(off) (V)
–0.5 to –4.5
–0.5 to –4.5
–0.5 to –4.5
V(BR)GSS Min (V)
–50
–50
–50
gfs Min (mS)
1.5
1.5
1.5
IG Max (pA)
–50
–50
–50
jVGS1 – VGS2j Max (mV)
5
10
15
Features
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise
D High CMRR: 100 dB
Benefits
Applications
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
D Wideband Differential Amps
D High-Speed,
Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
Description
The 2N5545/5546/5547JANTX/JANTXV are monolithic
dual n-channel JFETs designed to provide high input
impedance (IG < 50 pA) for general-purpose differential
amplifiers. The 2N5545 features minimum system error
and calibration (5-mV offset maximum).
The TO-71 package is available with full military
processing (see Military Information).
TO-71
S1
1
G2
6
D1 2
5 D2
3
G1
4
Top View
S2
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70253.
Siliconix
P-37514—Rev. B, 25-Jul-94
1




2N5547 pdf, 반도체, 판매, 대치품
2N5545/46/47/JANTX/JANTXV
Typical Characteristics (Cont’d)
Transfer Characteristics
5
VGS(off) = –2 V
VDS = 10 V
4
3 TA = –55_C
25_C
2
1 125_C
0
0 –0.5 –1.0 –1.5 –2.0 –2.5
VGS – Gate-Source Voltage (V)
Voltage Differential with Temperature
vs. Drain Current
100
VDG = 15 V
DTA = 25 to 125_C
DTA = –55 to 25_C
2N5547
10
2N5545
1
0.01
0.1
ID – Drain Current (mA)
1
Circuit Voltage Gain vs. Drain Current
100
Gate-Source Differential Voltage
vs. Drain Current
100
VDG = 15 V
TA = 25_C
2N5547
10
2N5545
1
0.01
0.1
ID – Drain Current (mA)
Common Mode Rejection Ratio
vs. Drain Current
130
CMRR = 20 log
DVDG
120 D VGS1 VGS2
110
DVDG = 10 – 20 V
100
5 – 10 V
90
1
80
0.01
1k
0.1
ID – Drain Current (mA)
On-Resistance vs. Drain Current
1
80 800
60
VGS(off) = –3 V
40
AV
+
1
gfs RL
) RLgos
VGS(off) = –2 V
20 Assume VDD = 15 V, VDS = 5 V
RL
+
10 V
ID
0
0.01 0.1
1
ID – Drain Current (mA)
4
600
400
200
0
0.01
VGS(off) = –2 V
VGS(off) = –3 V
0.1
ID – Drain Current (mA)
1
Siliconix
P-37514—Rev. B, 25-Jul-94

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