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PDF 2N5547 Data sheet ( Hoja de datos )
| Número de pieza | 2N5547 | |
| Descripción | Monolithic N-Channel JFET Duals | |
| Fabricantes | Vishay | |
| Logotipo |  |
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2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number VGS(off) (V)
2N5545
–0.5 to –4.5
2N5546
–0.5 to –4.5
2N5547
–0.5 to –4.5
V(BR)GSS Min (V)
–50
–50
–50
gfs Min (mS)
1.5
1.5
1.5
IG Max (pA)
–50
–50
–50
jVGS1 – VGS2j Max (mV)
5
10
15
FEATURES
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise
D High CMRR: 100 dB
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
APPLICATIONS
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
DESCRIPTION
The 2N5545/5546/5547JANTX/JANTXV are monolithic dual
n-channel JFETs designed to provide high input impedance
(IG < 50 pA) for general-purpose differential amplifiers. The
2N5545 features minimum system error and calibration (5 mV
offset maximum).
TO-71
S1
1
D1 2
G2
6
5 D2
3
G1
4
Top View
S2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
Document Number: 70253
S-04031—Rev. C, 04-Jun-01
www.vishay.com
8-1
1 page  
2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
f = 1 MHz
f = 1 MHz
84
6
VDS = 0 V
4
5V
2
15 V
0
0 –4 –8 –12 –16
VGS – Gate-Source Voltage (V)
–20
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 10 V
16
ID @ 200 mA
12
8 VGS = 0 V
4
0
10
100 1 k 10 k
f – Frequency (Hz)
100 k
Common-Source Forward Transconductance
vs. Drain Current
2.5
VGS(off) = –2 V
2.0
VDS = 15 V
f = 1 kHz
TA = –55_C
1.5
25_C
1.0
0.5 125_C
0
0.01
0.1
ID – Drain Current (mA)
Document Number: 70253
S-04031—Rev. C, 04-Jun-01
1
3 VDS = 0 V
5V
2
1 15 V
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
2.5
VGS(off) = –2 V
VDS = 15 V
f = 1 kHz
2.0
1.5
TA = –55_C
1.0
25_C
0.5
125_C
0
0.01
0.1
1
ID – Drain Current (mA)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1 k 10
800 gos 8
600 6
400
200
0
0
4
rDS
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 15 V, VGS = 0 V, f = 1 kHz
–1 –2 –3 –4
VGS(off) – Gate-Source Cutoff Voltage (V)
2
0
–5
www.vishay.com
8-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N5547.PDF ] | |
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