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PDF 2N4200 Data sheet ( Hoja de datos )
| Número de pieza | 2N4200 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Digitron Semiconductors | |
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Hay una vista previa y un enlace de descarga de 2N4200 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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DIGITRON SEMICONDUCTORS
2N4199 – 2N4204
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Reverse Blocking Voltage, Note 1 (TJ = 105°C)
Peak Forward Blocking Voltage, Note 1 (TC = 105°C)
2N4199
2N4200
2N4201
2N4202
2N4203
2N4204
VRRM
VDRM
50 Volts
300
400
500
Volts
600
700
800
Repetitive Peak On-State Current
(PW = 3 µs, Duty Cycle = 0.6%, TC = 85°C)
Continuous On-State Current (TC = 65°C)
Current Application Rate, Note 2
ITRM
IT
di/dt
100
5
5000
Amps
Amps
A/µs
Peak Forward Gate Power
Average Forward Gate Power
Peak Forward Gate Current
Peak Gate Voltage – Forward
Reverse, Note 3
Operating Junction Temperature Range
Blocking State
Conducting State
PGFM
PGF(AV)
IGFM
VGFM
VGRM
TJ
20
1
5
10
10
-65 to +105
-65 to +200
Watt
Watt
Amps
Volts
°C
Storage Temperature Range
Stud Torque
Tstg -65 to +200 °C
- 15 In. lb.
Thermal resistance, junction to case
RӨJC
3 °C/W
Note 1: Characterized for unilateral applications where reverse blocking capability is not important. VDRM and VRRM may be applied as a continuous dc voltage for zero or negative
gate voltage but positive gate voltage must not be applied concurrently with a negative potential on the anode. When checking blocking capability, do not permit the applied
voltage to exceed the rated voltage.
Note 2: Minimum Gate Trigger Pulse: IG = 200 mA, PW = 1 µs, tr = 20 ns.
Note 3: Do not reverse bias gate during forward conduction if anode current exceeds 10 amperes.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristics
Symbol
Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM, gate open) TC = 105°C)
IDRM, IRRM
Gate Trigger Current (Continuous dc)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C)
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = rated VDRM, RL = 100 ohms, TC = 105°C)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C)
IGT
VGT
Holding Current
(Anode Voltage = 7 Vdc, gate open, TC = 105°C)
IH
Forward “on” Voltage
(ITM = 5 Adc, PW = 1 ms max, Duty Cycle ≤ 1%)
VTM
Dynamic Forward “on” Voltage
(0.5 µs after 50% decay point on dynamic forward voltage waveform)
Forward Current: 30 A pulse
Gate Pulse: at 200 mA, PW = 1 µs, tr = 20 ns
VTM
Min
-
-
-
0.2
-
-
3
2.6
-
Max
2
50
100
-
1.5
2
-
-
25
Unit
mA
mA
Volts
mA
Volts
Volts
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116
1 page  
DIGITRON SEMICONDUCTORS
2N4199 – 2N4204
SILICON CONTROLLED RECTIFIERS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N4200.PDF ] | |
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