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PDF MFE9200 Data sheet ( Hoja de datos )
| Número de pieza | MFE9200 | |
| Descripción | N-CHANNEL TMOS SWITCHING FET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MFE9200
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous (1)
Pulsed (2)
Total Device Dissipation (a Jq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vDs
Vgs
id
'dm
pd
TJ. Tstg
Value
200
±20
400
800
1.8
14.4
- 55 to + 1 50
Unit
Vdc
Vdc
mAdc
Watts
mW/°C
°C
CASE 22-03, STYLE 12
TO-18 (TO-206AA)
TMOS
SWITCHING
—N-CHANNEL ENHANCEMENT
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(vG s = Do, i = 10 mA)
Gate Reverse Current
(VGS
=
15 Vdc. V DS
=
.
0)
ON CHARACTERISTICS*
Zero-Gate-Voltage Drain Current'
(V DS = 200 V, V GS = 0)
Gate Threshold Voltage
(VqS = VGS' D] = '.0mA)
Drain-Source On-Voltage (Vqs = 10 V)
(ID = 100 mA)
D(l = 250 mA)
(ID = 500 mA)
Static Drain-Source On Resistance
(Vqs = 10 Vdc)
(ID = 100 mA)
(ID = 250 mA)
(ID = 500 mA)
On-State Drain Current
(V DS = 25 V, V GS = 10 V)
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(Vds - 25 V, Vqs = 0, f = 1.0 MHz) -
Reverse Transfer Capacitance
(Vds = 25 V, Vqs = 0, f = 1.0 MHz)
Output Capacitance
(VD s = 25 V, Vqs = 0, f = 1.0 MHz)
Forward Transconductance
(Vds = 25 V, Id = 250 mA)
SWITCHING CHARACTERISTICS
Turn-On Time
See Figure 1
Turn-Off Time
See Figure 1
'Pulse Test: Pulse Width « 300 i*s, Duty Cycle « 2.0%.
Symbol
V (BR)DSX
!GSS
200
—
Typ
—
0.01
'dss
VGS(Th)
v DS(on)
r DS(on)
'Dion)
— " 0.1
—1.0
— 0.45
— 1.20
— 3.0
— 4.5
— 4.8
— 6.0
400 700
Cjss
C rss
Coss
9fs
—
*
—
200
72
2.8
15
400
—•on 6.0
—toff
6.0
Max
-
50
Unit
Vdc
nAdc
10 nAdc
4.0 Vdc
0.6
—1.60
Vdc
Ohms
6.0
6.4
—
_ mA
90 PF
3.5 pF
20 PF
— mmhos
15 ns
15 ns
6-143
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MFE9200.PDF ] | |
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