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부품번호 | 2N4441 기능 |
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기능 | SILICON CONTROLLED RECTIFIERS | ||
제조업체 | Digitron Semiconductors | ||
로고 | |||
전체 5 페이지수
2N4441-2N4444
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
2N4441
2N4442
2N4443
2N4444
VRRM, VDRM
50
200 Volts
400
600
Non repetitive peak reverse blocking voltage
(t = 5ms (max.) duration)
2N4441
2N4442
2N4443
2N4444
VRSM
75
300
Volts
500
700
Forward current RMS (all conduction angles)
IT(RMS)
8 Amps
Average on state current, TC = 73°C
IT(AV) 5.1 Amps
Peak non-repetitive surge current
(1/2 cycle, 60Hz preceded and followed by rated current and voltage)
ITSM
80 Amps
Circuit fusing considerations, TJ = -40 to +100°C; t = 8.3ms
I2t 25 A2s
Forward peak gate power
PGM 5 Watts
Average gate power
PG(AV)
0.5 Watts
Forward peak gate current
IGM 2 Amps
Peak reverse gate voltage
Operating junction temperature range
VRGM
TJ
10
-40 to +100
Volts
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque (6-32 screw)(2)
- 8 In. lb.
Note 1: Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with
a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. Soldering temperatures shall not exceed 225°C.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
RӨJA
Typical
-
40
Maximum
2.5
-
Unit
°C/W
°C/W
Rev. 20130117
High-reliability discrete products
and engineering services since 1977
2N4441-2N4444
SILICON CONTROLLED RECTIFIERS
Rev. 20130117
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ 2N4441.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2N4440 | RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C | Microsemi Corporation |
2N4440 | Trans GP BJT NPN 40V 1.5A 3-Pin TO-60 | New Jersey Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |