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PDF 2N5064 Data sheet ( Hoja de datos )
| Número de pieza | 2N5064 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5064 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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2N5060-2N5064
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage (1)
(TJ = -40 to +110°C, sine wave, 50 to 60 Hz, gate open)
2N5060
30
2N5061
VDRM
60
2N5062 VRRM 100
2N5064
200
V
On-state current RMS (180° conduction angles, TC = 80°C)
Average on-state current
(180° conduction angles)
(TC = 67°C)
(TC = 102°C)
Peak non-repetitive surge current
(TA = 25°C)
(1/2 cycle, sine wave, 60Hz)
IT(RMS)
IT(AV)
ITSM
0.8
0.51
0.255
10
A
A
A
Circuit fusing considerations
(t = 8.3 ms)
I2t 0.4 A2s
Average on-state current
(180° conduction angles)
(TC = 67°C)
(TC = 102°C)
IT(AV)
0.51
0.255
A
Forward peak gate power
(Pulse width ≤ 1.0µsec; T A = 25°C)
PGM 0.1 W
Forward average gate power
(TA = 25°C, t = 8.3ms)
PG(AV)
0.01
W
Forward peak gate current
(Pulse width ≤ 1.0µsec; T A = 25°C)
IGM 1.0
A
Reverse peak gate voltage
(Pulse width ≤ 1.0µsec; T A = 25°C)
VRGM
5.0
V
Operating junction temperature range
TJ
-40 to +110
°C
Storage temperature range
Tstg -40 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential
on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristics
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length ≥ 1/16” from case, 10 s max.)
Symbol
RθJC
RθJA
-
Max
75
200
230
Unit
°C/W
°C/W
°C
Rev. 20130116
1 page  
High-reliability discrete products
and engineering services since 1977
2N5060-2N5064
SILICON CONTROLLED RECTIFIERS
Rev. 20130116
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N5064.PDF ] | |
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