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VS-15ETX06PbF 데이터시트 PDF




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부품번호 VS-15ETX06PbF 기능
기능 Hyperfast Rectifier
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VS-15ETX06PbF 데이터시트, 핀배열, 회로
VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
TO-220AC
Base
cathode
2
TO-220 FULL-PAK
13
Cathode Anode
VS-15ETX06PbF
VS-15ETX06-N3
13
Cathode Anode
VS-15ETX06FPPbF
VS-15ETX06FP-N3
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-220AC, TO-220FP
15 A
600 V
3.2 V
18 ns
175 °C
Single die
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Benchmark ultralow forward voltage drop
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
TC = 133 °C
TC = 62 °C (FULL-PAK)
TJ = 25 °C
VALUES
600
15
170
30
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
600
Forward voltage
IF = 15 A
VF
IF = 15 A, TJ = 150 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 600 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.3
1.5
0.1
40
20
8.0
MAX.
-
3.2
1.8
50
300
-
-
UNITS
V
μA
pF
nH
Revision: 02-Jan-11
1 Document Number: 94006
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




VS-15ETX06PbF pdf, 반도체, 판매, 대치품
VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
www.vishay.com
Vishay Semiconductors
180
170
160
150 DC
140
Square wave (D = 0.50)
130 Rated VR applied
120 See note (1)
110
0
5 10 15 20 25
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
40
35
30
25 RMS limit
20
15
10
5 DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0
0 5 10 15 20 25
IF(AV) - Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
200
150
100 DC
Square wave (D = 0.50)
50 Rated VR applied
70
VR = 390 V
TJ = 125 °C
TJ = 25 °C
50 IF = 30 A
IF = 15 A
30
IF = 30 A
See note (1)
0
0 5 10 15 20 25
IF(AV) - Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
10
100
IF = 15 A
1000
dIF/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
450
400
VR = 390 V
TJ = 125 °C
350 TJ = 25 °C
300
250
200
IF = 30 A
IF = 15 A
150
100
50
0
100
1000
dIF/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 02-Jan-11
4 Document Number: 94006
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-15ETX06PbF 전자부품, 판매, 대치품
www.vishay.com
DIMENSIONS in millimeters
10.6
10.4
16.4
15.4
Hole
Ø
3.4
3.1
3.7
3.2 7.31
6.91
16.0
15.8
2.8
2.6
Outline Dimensions
Vishay Semiconductors
10°
3.3
3.1
13.56
13.05
2.54 TYP.
R
R
0.7
0.5
(2
places)
0.9
0.7
2.54 TYP.
4.8
4.6
5° ± 0.5°
5° ± 0.5°
0.61
0.38
2.85
2.65
1.4
1.15
1.05
TYP.
1.3
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Revision: 20-Jul-11
1 Document Number: 95005
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-15ETX06PbF

Hyperfast Rectifier

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