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VS-15AWL06FN-M3 데이터시트 PDF




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부품번호 VS-15AWL06FN-M3 기능
기능 Ultrafast Rectifier ( Diode )
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VS-15AWL06FN-M3 데이터시트, 핀배열, 회로
New Product
VS-15AWL06FN-M3, VS-15EWL06FN-M3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
VS-15AWL06FN-M3
Base cathode
4, 2
VS-15EWL06FN-M3
2, 4
1
Anode
3
Anode
1
N/C
D-PAK (TO-252AA)
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
D-PAK (TO-252AA)
15 A
600 V
1.05 V
60 ns
175 °C
Single die
FEATURES
• Ultrafast recovery time, extremely low VF and
soft recovery
• 175 °C maximum operating junction temperature
• For PFC DCM operation
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION/APPLICATIONS
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
TC = 148 °C
TJ = 25 °C
TC = 148 °C, f = 20 kHz, d = 50 %
VALUES
600
15
180
30
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
VBR,
VR
VF
IR = 100 μA
IF = 15 A
IF = 15 A, TJ = 150 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 600 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
TYP.
-
0.99
0.85
-
-
11
8
MAX. UNITS
-
1.05
0.92
10
120
-
-
V
μA
pF
nH
Document Number: 93568 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




VS-15AWL06FN-M3 pdf, 반도체, 판매, 대치품
New Product
VS-15AWL06FN-M3, VS-15EWL06FN-M3
Vishay Semiconductors Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
180
170
160 DC
150
140
Square wave (D = 0.50)
Rated VR applied
130
See note (1)
120
0
5 10 15 20 25
93236_05
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
15
RMS limit
10 D = 0.01
D = 0.02
D = 0.05
D = 0.10
5 D = 0.20
D = 0.50
DC
0
0 5 10 15 20 25
93236_06
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
450
400
350
300 IF = 15 A, TJ = 125 °C
250
200 IF = 15 A, TJ = 25 °C
150
100
50
0
100
1000
93236_07
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
5000
4500
IF = 15 A, TJ = 125 °C
4000
3500
3000
2500
IF = 15 A, TJ = 25 °C
2000
1500
100
1000
93236_08
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number: 93568
Revision: 15-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-15AWL06FN-M3 전자부품, 판매, 대치품
www.vishay.com
Outline Dimensions
Vishay Semiconductors
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
E
(3)
b3
A
0.010 M C A B
Ø2 4
L3 (3)
Ø1
B
D (5)
1 23
L4
AC
c2
A
Seating
plane
H
(2) L5
b2
2x e
Detail “C”
b
0.010 M C A B
A
c
Lead tip
Detail “C”
Rotated 90 °CW
Scale: 20:1
Gauge
plane
L2
Ø
(L1)
C
C
L
E1
4
D1
321
Pad layout
0.265 MIN.
(6.74)
0.488 (12.40)
0.409 (10.40)
0.245
(6.23)
MIN.
0.06 MIN.
(1.524)
0.093 (2.38)
0.085 (2.18)
0.089
(2.28)
MIN.
H (7)
C Seating
plane
A1
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 2.18 2.39 0.086 0.094
e
2.29 BSC
0.090 BSC
A1 - 0.13 - 0.005
H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035
L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045
L1
2.74 BSC
0.108 REF.
b3
4.95 5.46 0.195 0.215
3
L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024
L3
0.89 1.27 0.035 0.050
3
c2 0.46 0.89 0.018 0.035
L4 - 1.02 - 0.040
D
5.97 6.22 0.235 0.245
5
L5
1.14 1.52 0.045 0.060
2
D1 5.21 - 0.205 -
3
Ø 0° 10° 0° 10°
E
6.35 6.73 0.250 0.265
5
Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 -
3
Ø2 25° 35° 25° 35°
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
Revision: 05-Dec-12
1 Document Number: 95016
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-15AWL06FN-M3

Ultrafast Rectifier ( Diode )

Vishay
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