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VS-20ETF02PbF 데이터시트 PDF




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부품번호 VS-20ETF02PbF 기능
기능 Fast Soft Recovery Rectifier Diode
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VS-20ETF02PbF 데이터시트, 핀배열, 회로
VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
2
TO-220AC
3
1
Base
cathode
2
13
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-220AC
20 A
200 V, 400 V, 600 V
1.3 V
300 A
60 ns
150 °C
Single die
0.6
FEATURES
• Glass passivated pellet chip junction
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF0... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
IFSM
trr
VF
TJ
Range
Sinusoidal waveform
1 A, 100 A/μs
10 A, TJ = 25 °C
Range
VALUES
200 to 600
20
300
60
1.2
-40 to +150
VOLTAGE RATINGS
PART NUMBER
VS-20ETF02PbF, VS-20ETF02-M3
VS-20ETF04PbF, VS-20ETF04-M3
VS-20ETF06PbF, VS-20ETF06-M3
VRRM, MAXIMUM PEAK REVERSE
VOLTAGE
V
200
400
600
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
UNITS
V
A
ns
V
°C
IRRM
AT 150 °C
mA
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
TC = 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
UNITS
A
A2s
A2s
Revision: 11-Feb-16
1 Document Number: 94096
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




VS-20ETF02PbF pdf, 반도체, 판매, 대치품
VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
1000
100
10 TJ = 25 °C
TJ = 150 °C
20ETF.. Series
1
012345
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
0.15
0.10
0.05
20ETF.. Series
TJ = 25 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
70
60
20ETF.. Series
TJ = 25 °C
50
40
30
20
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
10
0
0
IFM = 1 A
200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.5
20ETF.. Series
TJ = 150 °C
0.4
IFM = 30 A
0.3
IFM = 20 A
IFM = 10 A
IFM = 5 A
0.2 IFM = 1 A
0.1
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
100
20ETF.. Series
80 TJ = 150 °C
60
40
20
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 11-Feb-16
4 Document Number: 94096
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-20ETF02PbF 전자부품, 판매, 대치품
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
(6)
E
E2 (7)
Q
(6) D
L3
D1
1 23
L4
A
ØP
0.014 M B A M
Detail B
(6) H1
(7)
A
C
L
B
Seating
plane
A
A1
e1
0.015 M B A M
cA
A2
E
H1
θ
Thermal pad
1 23
DD
CC
L1
D2 (6)
2 x b2
2xb
Detail B
E1 (6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Lead tip
View A - A
Conforms to JEDEC outline TO-220AC
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.25 4.65 0.167 0.183
E1
6.86 8.89 0.270 0.350
6
A1 1.14 1.40 0.045 0.055
E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115
e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040
e1 4.88 5.28 0.192 0.208
b1
0.38 0.97 0.015 0.038
4
H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068
L 13.52 14.02 0.532 0.552
b3
1.14 1.73 0.045 0.068
4
L1
3.32 3.82 0.131 0.150
2
c 0.36 0.61 0.014 0.024
L3 1.78 2.13 0.070 0.084
c1
0.36 0.56 0.014 0.022
4
L4
0.76 1.27 0.030 0.050
2
D
14.85 15.25 0.585 0.600
3
Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355
Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6
90° to 93° 90° to 93°
E
10.11 10.51 0.398 0.414
3, 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following:
Revision: 07-Mar-11
www.vishay.com
1

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VS-20ETF02PbF

Fast Soft Recovery Rectifier Diode

Vishay
Vishay

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