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BAW56L PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAW56L
기능 Dual Switching Diode Common Anode
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BAW56L 데이터시트, 핀배열, 회로
BAW56L, SBAW56L
Dual Switching Diode
Common Anode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Forward Surge Current
(60 Hz @ 1 cycle)
VR 70 V
IF 200 mA
IFSM
2.0
A
Non−Repetitive Peak Forward Current
t = 1 ms (Note 3)
IFSM
4.0
A
Repetitive Peak Forward Current
IFRM 500 mA
Pulse Wave = 1 sec, Duty Cycle = 66%
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board PD 225 mW
(Note 1) TA = 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Square Wave; Tj = 25°C.
www.onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 12
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAW56LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SBAW56LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAW56LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SBAW56LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 10
1
Publication Order Number:
BAW56LT1/D




BAW56L pdf, 반도체, 판매, 대치품
BAW56L, SBAW56L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
E
A
A1
D
3
12
e
TOP VIEW
SIDE VIEW
HE
3X b
0.25
T
L
L1
VIEW C
SEE VIEW C
END VIEW
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.08 0.14 0.20
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e 1.78 1.90 2.04
L 0.30
0.43
0.55
L1 0.35
0.54
0.69
H E 2.10
T 0°
2.40
−−−
2.64
10°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X 0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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BAW56LT1/D
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