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PDF BZX84C13ET1G Data sheet ( Hoja de datos )
| Número de pieza | BZX84C13ET1G | |
| Descripción | Zener Voltage Regulators | |
| Fabricantes | ON Semiconductor | |
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BZX84CxxxET1G Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
250 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
• 250 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Peak Power − 225 W (8 X 20 ms)
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating
Symbol Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ≤ 25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Ppk 225 W
PD
RqJA
PD
RqJA
TJ, Tstg
250
2.0
500
300
2.4
417
−65 to
+150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
www.onsemi.com
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
xxx M G
G
1
xxx = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BZX84CxxxET1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84CxxxET1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84CxxxET3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SZBZX84CxxxET3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 10
1
Publication Order Number:
BZX84C2V4ET1/D
1 page  
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
100
TA = 25°C
1000
100
10
1
BIAS AT
50% OF VZ NOM
10
0.1
0.01
0.001
0.0001
1 1 10 1000.00001 0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
+150°C
+ 25°C
− 55°C
10 20 30 40 50 60 70 80
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
90
100 100
TA = 25°C
10 10
TA = 25°C
11
0.1 0.1
0.01 0
2 4 6 8 10
VZ, ZENER VOLTAGE (V)
12 0.0110
30 50 70
VZ, ZENER VOLTAGE (V)
90
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
90 tr
80
70
60
50
40
30
20
10
0
0
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
tP
20 40
60
t, TIME (ms)
Figure 9. 8 × 20 ms Pulse Waveform
80
www.onsemi.com
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