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PDF BRY55-600 Data sheet ( Hoja de datos )
| Número de pieza | BRY55-600 | |
| Descripción | SILICON CONTROLLED RECTIFIER | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BRY55-600 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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BRY55 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
(RGK = 1000Ω, TJ = 25-125°C)
BRY55-30
BRY55-60
BRY55-100
BRY55-200
BRY55-400
BRY55-500
BRY55-600
VRRM, VDRM
30
60
100 Volts
200
400
500
600
Forward current RMS (all conduction angles)
IT(RMS)
0.8 Amps
Peak forward surge current, TA = 25°C
(1/2 cycle, sine wave, 60Hz)
ITSM 8 Amps
Circuit fusing considerations, TA = 25°C
(t = 8.3ms)
I2t 0.15 A2s
Forward peak gate power, TA = 25°C
PGM 0.1 Watts
Forward peak gate current , TA = 25°C (300µs, 120 PPS)
IGFM 1 Amps
Operating junction temperature range @ rated VRRM and VDRM
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Lead solder temperature (<1.5mm from case, 10s max)
+230
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
RӨJA
Maximum
75
200
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC 25°C, RGK = 1000Ω unless otherwise noted)
Characteristic
Symbol
Peak forward blocking current
(VD = rated VDRM @ TC = 125°C)
Peak reverse blocking current
(VR = rated VRRM @ TC = 125°C)
Forward “on” voltage(2)
ITM = 1A peak @ TA = 25°C)
IDRM
IRRM
VTM
Gate trigger current (continuous dc)(3)
(Anode voltage = 7Vdc, RL = 100 Ω)
IGT
Min. Max.
- 100
- 100
- 1.7
- 200
Unit
µA
µA
Volts
µA
Rev. 20130117
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BRY55-600.PDF ] | |
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