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PDF CV8616 Data sheet ( Hoja de datos )
| Número de pieza | CV8616 | |
| Descripción | SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CV8616 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
'C
PD
Tj, T s tg
Symbol
RftJA
Value
20
20
5
100
0.3
2.0
-55 to +175
Max
500
Unit
Vdc
Vdc
Vdc
mAmp
Watt
mW/°C
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 10 mA, Ib = 0)
Collector Cutoff Current
(VCE = 20 V, Ie = 0)
(V'CE = 20 V, IE = 0. Ta = 100°C)
Emitter Cutoff Current
(Veb = 5.0 V, lc = 0)
(V£B = 1.5 V, lc = 0)
(VFR = 1.5 V, lc = °- T A
100°C)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage(1)
(IC = 30 mA, Ib = 1-5 mA)
Base-Emitter Saturation Voltage(1)
(IC = 10 mA, Ib = 1 mA)
(If. = 50 mA, Ib = 2.5 mA)
DC Current Gain(1)
(IC = 1 mA, Vce = °- 4 v )
C(I = 10 mA, Vce = 0.4 V)
(IC = 30 mA, Vce = 0.4 V)
(IC = 50 mA, Vce = 0.75 V)
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 1 mA, VcE = 1 2 V, f = 20 MHz)
Output Capacitance
(VcB = 10 V, f = 1 MHz)
Input Capacitance
(VEB = 0.5 V, f = 1 MHz)
Storage Time (See Figure 1)
(Vce = 1 V, lc = 1 mA)
(lB1 = lB2 = 10 mA)
(1) Pulsed: Pulse Duration = 300 us. Duty Cycle = 1%.
CV8616
CASE 22-03. STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
NPN SILICON
Symbol Min
|
VCEO(sus)
ICBO
20
lEBO
VCE(sat)
VBE(sat)
hFE
30
35
20
20
Co bo
Cjbo
50
Unit
50 nA
20 uA
10 uA
25 nA
20 uA
0.4
0.9
1.6
MHz
pF
10
pF
25
50
4-253
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CV8616.PDF ] | |
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