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부품번호 | 2N2221L 기능 |
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기능 | Radiation Hardened NPN Silicon Switching Transistors | ||
제조업체 | MA-COM | ||
로고 | |||
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
Features
Qualified to MIL-PRF-19500/255
Levels
JANSM-3K Rads (Si) JAN
JANSD-10K Rads (Si) JANTX
JANSP-30K Rads (Si) JANTXV
JANSL-50K Rads (Si) JAN
JANSR-100K Rads (Si)
TO-18 (TO-206AA), Surface mount UA & UB
Packages
Applications
Switching and Linear Applications
DC and VHF Amplifier Applications
Electrical Specifications @ TA = 25°C
Parameter
Test Conditions
Symbol Units Minimum Maximum
Off Characteristics:
Collector - Emitter Breakdown
IC = 10 mAdc
V(BR)CEO Vdc
50
—
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
VCB = 75 Vdc
VCB = 60 Vdc
VEB = 6.0 Vdc
VEB = 4.0 Vdc
ICBO1
ICBO2
IEBO1
IEBO2
µAdc
nAdc
µAdc
nAdc
—
—
10
10
10
10
Collector - Emitter Cutoff Current
VCE = 50 Vdc
ICES nAdc
—
50
On Characteristics1:
Forward Current Transfer Ratio
Collector - Base Cutoff Current
2N2221A, L, UA, UB
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10.0 mAdc, VCE = 10 Vdc
IC = 150.0 mAdc, VCE = 10 Vdc
IC = 500.0 mAdc, VCE = 10 Vdc
2N2222A, L, UA, UB
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10.0 mAdc, VCE = 10 Vdc
IC = 150.0 mAdc, VCE = 10 Vdc
IC = 500.0 mAdc, VCE = 10 Vdc
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base - Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2%.
hFE
VCE(sat) Vdc
VBE(sat) Vdc
30
35
40
40
20
50
75
100
100
30
—
0.6
—
—
150
—
120
—
—
325
11
120
—
0.3
1.0
1.2
2.0
1 (Continued next page)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Outline Drawing (UA Surface Mount):
Rev. V1
Pin #
1
2
Transistor Collector Emitter
3
Base
4
N/C
Symbol
BL
BL2
BW
BW2
CH
L3
LH
LL1
LL2
LS
LW
LW2
Dimensions
Inches
Millimeters
Min. Max. Min. Max.
0.215 0.225 5.46 5.71
— 0.225 — 5.71
0.145 0.155 3.68 3.93
0.155
3.93
0.061 0.075 1.55 1.90
0.003 0.007 0.08 0.18
0.029 0.042 0.74 1.07
0.032 0.048 0.81 1.22
0.072 0.088 1.83 2.23
0.045 0.055 1.14 1.39
0.022 0.028 0.56 0.71
0.006 0.022 0.15 0.56
Notes
—
—
—
—
3
5
—
—
—
—
—
5
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension CH controls the overall package thickness. When a window lid is used, dimension CH must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the
drawing.
5. Dimensions LW2 minimum and L3 minimum and the appropriate castellation length define an unobstructed
three-dimensional space traversing all of the ceramic layers in which a castellation was designed.
(Castellations are required on the bottom two layers, optional on the top ceramic layer.) Dimension LW2
maximum and L3 maximum define the maximum width and depth of the castellation at any point on its
surface. Measurement of these dimensions may be made prior to solder dipping.
6. The co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not
exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to Фx symbology.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |