|
|
PDF 2N2270 Data sheet ( Hoja de datos )
| Número de pieza | 2N2270 | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N2270 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
|
No Preview Available !
2N2270
CASE 79-02, STYLE
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage, Rbe « 10 Ohms
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (5 Ta = 25°C
Derate above 25°C
Total Device Dissipation (d Tq = 2 ^°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
VCER
vCBO
VEBO
ic
PD
Pd
TJ- Tstg
Value
45
60
60
7.0
1.0
1.0
5.71'
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/°C
°C
Refer to 2N3019 for graphs.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
r &jc
RsjaH)
Max
35
175
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Symbol
Collector-Emitter Breakdown Voltage(2) (\q = 100 mAdc, Rbe « 10 Ohms)
Collector-Emitter Sustaining Voltage(2) 0c = 100 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (Ic = 0.05 /uAdc, lg = 0)
Emitter-Base Breakdown Voltage Oe = 0.1 mAdc, Iq = 0)
Collector Cutoff Current (Vqb = 60 Vdc, lg = 0, Jq = 25°C)
(VCB = 60 Vdc, l£ = 0, TC = 150°C)
Emitter Cutoff Current (Vbe = 5.0 Vdc, Ic = 0)
ON CHARACTERISTICS
V (BR)CER
vCEO(sus)
v (BR)CBO
v (BR)EBO
'CBO
!eBO
DC Current Gain
dC = 1.0 mAdc, Vce = 10 Vdc)
dC = 150 mAdc, V C e = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 150 mAdc, Ib = 15 mAdc)
hFE
v CE(sat)
Base-Emitter Saturation Voltage
dC = 150 mAdc, Ib = 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mAdc, Vce = 1° Vdc, f = 20 MHz)
v BE(sat)
fT
Output Capacitance
(Vcb = 10 Vdc, Ie = 0, f = 100 kHz)
Cobo
Input Capacitance
(Vbe = 0-5 Vdc, Ic = 0, f = 100 kHz)
C-ibo
Small-Signal Current Gain
(IC = 5.0 mAdc, Vce = 10 Vdc, f = 1.0 kHz)
Noise Figure
dC = 0.3 mAdc, Vce = 10 Vdc, R s = 1.0 k Ohm,
f = 1.0 kHz, B.W. = 1.0 Hz)
SWITCHING CHARACTERISTICS
hfe
NF
Total Switching Time
ton + toff
(1) R 6UA s' measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width =s 300 /xs, Duty Cycle =£ 2.0%.
60
45
60
7.0
—
-
30
50
—
—
100
—
—
50
—
Typ
—
—
—
-
-
90
135
0.15
0.88
250
10
60
-
7.0
_
—
0.05
100
100
200
0.9
1.2
-
15
80
275
10
Unit
°c/w
°c/w
Unit
Vdc
Vdc
Vdc
Vdc
jitAdc
nAdc
-
Vdc
Vdc
MHz
pF
pF
-
dB
4-30
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N2270.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N2270 | AMPLIFIER TRANSISTOR | Motorola Semiconductors |
| 2N2270 | High-Speed Powwer Transistors(Silicon NPN Planar Transistor) |  ETC |
| 2N2270 | (2N2xxx) NPN General Purpose Medium Speed Amplifiers |  Semicoa |
| 2N2270 | NPN Silicon Planar Transistor |  CDIL |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |