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부품번호 | 2N2369A 기능 |
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기능 | Switching Transistors | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N2369/D
Switching Transistors
NPN Silicon
COLLECTOR
3
2
BASE
2N2369
2N2369A*
*Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector– Base Voltage
Emitter– Base Voltage
Collector Current (10 ms pulse)
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VCBO
VEBO
IC(Peak)
IC
PD
15
40
40
4.5
500
200
0.36
2.06
Vdc
Vdc
Vdc
Vdc
mA
mA
Watt
mW/°C
Total Device Dissipation @ TC = 100°C
Derate above 100°C
PD
0.68 Watts
6.85 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
486
Thermal Resistance, Junction to Case
RqJC
147
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0)
Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0)
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
Base Current
(VCE = 20 Vdc, VBE = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2N2369
2N2369A
2N2369A
2N2369A
Symbol
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
ICES
IB
Preferred devices are Motorola recommended choices for future use and best overall value.
3
21
CASE 22–03, STYLE 1
TO–18 (TO–206AA)
Min Max Unit
40 — Vdc
15 — Vdc
40 — Vdc
4.5 — Vdc
mAdc
— 0.4
— 30
— 0.4 mAdc
— 0.4 mAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
2N2369 2N2369A
500
VCC = 10 V
25°C
200 100°C
QT, βF = 10
QT, βF = 40
100
50
QA, VCC = 10 V
20 QA, VCC = 3 V
10
12
5 10 20
50 100
IC, COLLECTOR CURRENT (mA)
Figure 8. Maximum Charge Data
+5 V t1
∆V
0
< 1 ns
PULSE WIDTH (t1) = 5 µs
DUTY CYCLE = 2%
270
3V
10 pF MAX
4.3 k
VALUES REFER TO
IC = 10 mA TEST
Cs* < 4 pF
Figure 9. QT Test Circuit
C COPT
C < COPT
C=0
TIME
Figure 10. Turn–Off Waveform
+6 V
0
t1
–4 V
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
980
10 V
500
Cs* < 3 pF
Figure 11. Storage Time Equivalent Test Circuit
1.0
0.8
0.6
0.4
0.2
0.02
IC = 3 mA
IC = 10 mA
IC = 30 mA
IC = 50 mA
IC = 100 mA
TJ = 25°C
0.05 0.1
0.2
0.5 1
2
IB, BASE CURRENT (mA)
5
Figure 12. Maximum Collector Saturation Voltage Characteristics
10
20
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
2N2369 | Bipolar NPN Device | Seme LAB |
2N2369 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |