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PDF 2N2369A Data sheet ( Hoja de datos )
| Número de pieza | 2N2369A | |
| Descripción | Switching Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N2369/D
Switching Transistors
NPN Silicon
COLLECTOR
3
2
BASE
2N2369
2N2369A*
*Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector– Base Voltage
Emitter– Base Voltage
Collector Current (10 ms pulse)
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VCBO
VEBO
IC(Peak)
IC
PD
15
40
40
4.5
500
200
0.36
2.06
Vdc
Vdc
Vdc
Vdc
mA
mA
Watt
mW/°C
Total Device Dissipation @ TC = 100°C
Derate above 100°C
PD
0.68 Watts
6.85 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
486
Thermal Resistance, Junction to Case
RqJC
147
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0)
Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0)
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
Base Current
(VCE = 20 Vdc, VBE = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2N2369
2N2369A
2N2369A
2N2369A
Symbol
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
ICES
IB
Preferred devices are Motorola recommended choices for future use and best overall value.
3
21
CASE 22–03, STYLE 1
TO–18 (TO–206AA)
Min Max Unit
40 — Vdc
15 — Vdc
40 — Vdc
4.5 — Vdc
mAdc
— 0.4
— 30
— 0.4 mAdc
— 0.4 mAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page  
2N2369 2N2369A
200
TJ = 125°C
VCE = 1 V
100 75°C
25°C
–15°C
TJ = 25°C and 75°C
50
–55°C
20
12
5 10 20
IC, COLLECTOR CURRENT (mA)
50 100
Figure 13. Minimum Current Gain Characteristics
1.4
βF = 10
1.2 TJ = 25°C
1.0
MAX VBE(sat)
0.8 MIN VBE(sat)
0.6
0.4 MAX VCE(sat)
0.2
12
5 10 20
50
IC, COLLECTOR CURRENT (mA)
Figure 14. Saturation Voltage Limits
100
1.0
0.5
θVC for VCE(sat)
0
APPROXIMATE DEVIATION
FROM NOMINAL
–0.5 –55°C to +25°C 25°C to 125°C
θVC ±0.15 mV/°C ±0.15 mV/°C
–1.0 θVB ±0.4 mV/°C ±0.3 mV/°C
–1.5
θVB for VBE(sat)
–2.0
(25°C to 125°C)
(–55°C to +25°C)
(–55°C to +25°C)
(25°C to 125°C)
–2.5
0
10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 15. Typical Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N2369A.PDF ] | |
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