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PDF MCR72-3 Data sheet ( Hoja de datos )

Número de pieza MCR72-3
Descripción SILICON CONTROLLED RECTIFIERS
Fabricantes Digitron Semiconductors 
Logotipo Digitron Semiconductors Logotipo



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No Preview Available ! MCR72-3 Hoja de datos, Descripción, Manual

MCR72 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)
MCR72-1
MCR72-2
MCR72-3
MCR72-4
MCR72-5
MCR72-6
MCR72-7
MCR72-8
25
50
VDRM
VRRM
100
200
300
400
500
600
V
On-state RMS current (180° conduction angles, TC = 83°C)
IT(RMS)
8.0
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 110°C)
Circuit fusing consideration (t = 8.3ms)
ITSM 100
A
I2t 40 A2s
Forward peak gate voltage (t ≤ 10µs, TC = 83°C)
Forward peak gate current (t ≤ 10µs, TC = 83°C)
VGM ±5.0
IGM 1.0
V
A
Forward peak gate power (pulse width ≤ 10µs, TC = 83°C)
PGM 5.0
W
Average gate power (t = 8.3ms, TC = 83°C)
PG(AV)
0.75
W
Operating junction temperature range
TJ -40 to +110 °C
Storage temperature range
Tstg -40 to +150
°C
Mounting torque
- 8.0 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length 1/8” from case, 10s max)
Symbol
RӨJC
RӨJA
TL
Maximum
2.2
60
260
Unit
°C/W
°C/W
°C
Rev. 20130115

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