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2N2959 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2N2959
기능 SWITCHING TRANSISTORS
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2N2959 데이터시트, 핀배열, 회로
2N2959
CASE 79, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation (5 T/\ = 25°C
Derate above 25°C
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
VCBO
v EBO
ic
pd
pd
Tj, Tstg
Value
20
60
5.0
600
0.6
20
3.0
4.00
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
0c = 10 mAdc, pulsed, Ib = 0)
Collector-Base Breakdown Voltage
dC = 10 MAdc, El = 0)
Emitter-Base Breakdown Voltage
E(l = 10 ^Adc, cl = 0)
Collector Cutoff Current
(Vce = 30 Vdc, Vbe = 0.5 Vdc)
Collector Cutoff Current
(V C b = 50 Vdc, El = 0)
(VC B = 50 Vdc, El = 0, Ta = 150°C)
Base Cutoff Current
(VcE = 30 Vdc, V BE = 0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain (lc = 150 mAdc, Vqe = 10 Vdc)
Collector-Emitter Saturation Voltage(1) (lc = 150 mAdc, Ib = 15 mAdc)
Base-Emitter Saturation Voltaged) (lc = 150 mAdc, bI = 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
C(l = 20 mA, Vc E = 20 V, f = 100 MHz)
Output Capacitance
(Vcb = 10 V, El = 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(Vcc = 30 V, Ics = 150 mA, Iqi = 15 mA)
Rise Time
< VCC = 30 V, Ics = 150 mA, BI 1 = 15 mA)
Storage Time
(Vcc = 6.0 V, Ics = 150 mA, l B1 = 15 mA,
lB2 = 15 mA)
Fall Time
(Vcc
=
60
v
.
!CS
=
150 mA, BI 1
=
15 mA,
lB2 = 15 mA)
(1) Pulse Test: Pulse Width =s 300 ^s, Duty Cycle « 2.0%.
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
( CEX
! CBO
IBL
20
60
5.0
-
hFE
v CE(sat)
v BE(sat)
h
Cobo
td
tr
*s
tf
100
-
250
~
"
Max
-
.050
0.025
15
.050
300
0.5
1.3
8.0
Vdc
Vdc
Vdc
/uAdc
juAdc
/uAdc
Vdc
Vdc
MHz
PF
20 ns
75 ns
300 ns
200 ns
4-54






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