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Número de pieza | 2N3114CSM | |
Descripción | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | |
Fabricantes | TT | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N3114CSM (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3114CSM
• High Voltage
• Hermetic Ceramic Surface Mount Package
• Designed For Low Noise General Purpose Amplifiers,
Driver Stages and Signal Processing Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
150V
VCEO
Collector – Emitter Voltage
150V
VEBO
Emitter – Base Voltage
5V
IC Continuous Collector Current
150mA
PD Total Power Dissipation at TA = 25°C
350mW
Derate Above 25°C
2mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
Min. Typ. Max. Units
500 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 5293
Issue 2
Page 1 of 3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2N3114CSM.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N3114CSM | Bipolar NPN Device | Seme LAB |
2N3114CSM | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | TT |
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