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MMBT2222ALT1 데이터시트 PDF




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부품번호 MMBT2222ALT1 기능
기능 General Purpose Transistor
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MMBT2222ALT1 데이터시트, 핀배열, 회로
WILLAS
FM120-M+
MMBT2222(A)LTTH1RU
1G.0AeSnUReFArCaElMPOuUNrTpSoCHsOeTTTKrYaBAnRsRIiEsRtRoErCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
NPN SBilaitccoh pnrocess design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
RoHS porpotdimucizt efobropaarcdksinpgacoed. e suffix "G",
MHaoliosgt••ueHLnreoifgwrSeheepcnoupswrriroetedirvnulitoctcyst asfLop, erahvpibgeaihllcitk1eyi,fnfligocwiceofndoceryw.saurfdfixvo"Hlta" .ge drop.
High surge capability.
Guardring for overvoltage protection.
MAXIMUUMltrRa AhiTgIhN-GspSeed switching.
SRilaictionng epitaxial planar chip,Smymetbaol lsilicon ju22n2c2tion.
Lead-free parts meet environmental standards of
2222A
CollecMtoIrL–E-SmTitDte-r1V9o5lt0a0ge/228
V CEO
30
RoHS product for packing code suffix "G"
CollecHtoarloBgaesnefrVeoeltapgroeduct for packingVcCoBdOe suffix "H"60
40
75
EmitMter–eBcasheaVonltaigceal data V EBO
5.0
6.0
CollecEtoproCxuyrr:eUntL94C-Von0tirnautoeudsflame reItCardant 600
600
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Unit
Vdc
Vdc
Vdc
mAdc
0.071(1.8)
0.056(1.4)
SOT– 23
3
0.04C0O(1L.0L)ECTOR
0.024(0.6)
THERMACLasCeH: MARolAdeCdTpElaRsItSicT,ISCOSD-123H
CharaTcetermrisintica
ls
:Plate
d
terminals,
solderable
,
peSr yMmIbLo-Sl TD-750 Max
Method 2026
Total Device Dissipation FR– 5 Board, (1)
TA =2P5o°Clarity : Indicated by cathode band
PD
225
DerateMaobuonvtein2g5P°Cosition : Any
1.8
0.031(0.8) Typ.
Unit
1
BASE
0.031(0.8) Typ.
mW
2
Dimensions in inches and (millimeters)EMITTER
mW/°C
ThermWaleRigehstis:tAanpcper,oJxuinmcatiotendto0A.0m1b1iegnrtam
RθJA
556 °C/W
Total Device Dissipation
PD 300 mW
Alumina SubsMtrAatXe,I(M2)UTMA = R25A°CTINGS AND ELECTRICAL CHARACTERISTICS
RatDinegrsataet a2b5ovea2mbCient temperature unless otherwise specified.
2.4
mW/°C
SingTlheeprmhaasl eRheasilsf twanacvee,, J6u0nHczti,ornetsoisAtimveboiefnitnductive load.RθJA
417 °C/W
  ForJcuanpcaticointivaenldoaSdto, rdaegreatTeemcuprererantubrey 20%
TJ , Tstg
–55 to +150
°C
ORDERING INFORMATION
Device
Marking
Shipping
MMBT2222LT1
M1B 3000/Tape & Reel
MMBT2222ALT1 1P 3000/Tape & Reel
DEVICE MARKINGRATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
MMBT2222LT1= M1B ; M MBT2222ALT1= 1 P
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
MEaLxEimCuTmRRICMASLVoCltaHgAeRACTERISTICS (TA = 25°C uVnRleMsSs other1w4ise note2d1.)
28
35
42
18 10
115 120
80 100 150 200 Volts
56 70 105 140 Volts
Maximum DC BlocCkihnagrVacotlteargisetic
VDC 20 Sym30bol 4M0 in 50 Max 60 Unit80 100 150 200 Volts
Maximum Average Forward Rectified Current
  OFF CHARACTERISTICS
IO
 
PeakCFoollrewcatordr–SEumrgeittCerurBrerenta8k.d3omwsnsVinogllteahgaelf sineM-wMavBeT22I2F2SM
superimposed on rated load (JEDEC method)
(I C = 10 mAdc, I B = 0)
Typical Thermal Resistance (Note 2)
TypiCcaolllJeucntocrtioBnaCsaepBacreitaakndceow(NnoVteol1ta) ge
MMBT2222A
RΘJA
MMBT222C2J
Ope(rIaCtin=g1T0eµmApdecra, tIuEre= R0)ange
MMBT222T2JA
StorEagmeitTteerm–BpearsaetuBrereRaakndgoewn Voltage
MMBT22T2S2TG
  (I E = 10 µAdc, I C = 0)
MMBT2222A
V (BR)CEO
 
 V (BR)CBO
-55 to +125
V (BR)EBO
30
40
60
75
5.0
6.0
1.0
 
30 Vdc
––
 
40
120 Vdc
- 65 to +V1d7c5
––
 
 
-55 to +150
Amps
 
Amps
℃/W
PF
Collector CutoffCCHuArrReAnCt TERISTICS
Max(imVuCmE F=o6rw0 aVrddcV,oIltaEBg(oeff)a=t 13..00AVdDcC)
MMBT2S2Y2M2BAOL FM120-MH FIM1C3EX0-MH FM140-MH FM150-M1H0FM160-MHnFAMd1c80-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50 0.70
0.85
0.9 0.92 Volts
MaxCimoullmecAtovreCraugteofRf CevuerrrseentCurrent at
Rate(dV DCBC=B5lo0cVkidngc,VIoElt=ag0e)
@T
@T
AA==12M255℃MBT222I2R
  (V CB = 60 Vdc, I E = 0)
MMBT2222A
I CBO
––
––
0.5µAdc
0.01 10
0.01
 
mAmp
NOT(EVS:CB = 50 Vdc, I E = 0, T A = 125°C)
MMBT2222
–– 10
1- Me(VasCuBre=d6a0t 1VMdcH,ZI aEn=d0a,pTpliAed= r1e2ve5r°sCe)voltage oMf 4M.0BVTD22C2. 2A
–– 10
2- ThEemrmitatleRr eCsuisttoafnfcCeuFrrroemntJunction to Ambient
 
 
(V EB = 3.0 Vdc, I C = 0)
Base Cutoff Current
MMBT2222A
I EBO
100 nAdc
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
MMBT2222A
I BL
20 nAdc
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
201220-1112-06
WILWLAILSLEALSEECLTERCOTRNOICNICCOCROPR.P.




MMBT2222ALT1 pdf, 반도체, 판매, 대치품
WILLAS
FM120-M+
MMBT2222(A)LTTH1RU
1.G0AeSUnReFArCaElMPOuUNrTpSoCHsOeTTTKYraBAnRsRIiEsRtRoECrTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
op20t0imize board space.
Low power loss, high efficiency.
I C /I B = 10
H1ig00h current capability, low forward voltage droTpJ=. 25°C
Hig70h surge capability.
t r @V CC= 30V
Gu5a0rdring for overvoltage protect tdi@onV.EB(off) = 2.0V
Ult3r0a high-speed switching.
t d@V EB(off) =0
Sil2ic0 on epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MI1L0-STD-19500 /228
Ro7H.0S product for packing code suffix "G"
Ha5l.o0gen free product for packing code suffix "H"
Me3.c0 hanical data
Ep2o.0xy : UL94-V0 rated flame retardant
5.0 7.0 10
20 30 50 70 100
Case : Molded plastic, SOD-123H
200 300 500
Terminals :PlatedItCe,rCmOinLaLlEs,CsToOldReCraUbRleRpEeNrTM(mILA-S) TD-750,
Method 2F0i2g6ure 5. Turn–On Time
Package outline
SOD-123H
100
0.146(3.7)
70 0.130(3.3)
t ’s= t s–1/8 t f
50
30 t f
20
V CC= 30V
0.0I1C2/(I0
.B3=)
10
Typ.
I B1 = I B2
TJ= 25°C
0.071(1.8)
0.056(1.4)
10
7.0
0.040(1.0)
5.0 0.024(0.6)
5.0 7.0 10
20 30 50 70 100
200 300 500
0.031(0.8) Typ.
0.031(0.8) Typ.
I C , COLLECTOR CURRENT (mA)
Figure 6. Turn - Off Time
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Mo10unting Position : Any
10
Weight : Approximated 0.011 gram
I C = 1.0 mA, R S = 150
R S = OPTIMUM
RS = SOURCE
f = 1.0 kHz
8
MAXIMUI CM= 5R00AµTA,IRNSG= S200AND
RS = RESISTANCE
ELECTRICAL
8
CHARACTERISTICSI
C=50
µA
I C = 100 µA, R S = 2.0 k
100 µA
Ratings at 25℃
6
ambient tIeCm=p5e0rµaAtu, rRe Su=n4le.0sskotherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
500 µA
6 1.0 mA
  For capacitive load, derate current by 20%
4
RATINGS
4
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Rec2urrent Peak Reverse Voltage
12 13 14 15 16
VRRM
20
30 240
50
60
18 10
115 120
80 100 150 200 Volts
Maximum RMS Voltage
Maximum DC0B0.l0o1c0k.0in2g V0o.0l5ta0g.e1 0.2
0.5 1.0 2.0
VRMS
5.0 V10DC 20
14
5200 100
21
30
28 35
04500 100 52000
42 56 70
500601.0k 2.0k80 5.0k 1100k 0 20k
105 140
5105k0 100k 200
Volts
Volts
Maximum Average Forward Recfti,fieFdRCEuQrrUeEntNCY (kHz) IO
  Peak Forward Surge CurrentF8i.g3umrses7in.glFerheaqlf usienen-wcayveEffe IcFStsM
R S,
Figure
SOUR1C.0E RESISTANCE
8. Sou  rce Resistance
(k)
Effects
30
Amps
 
Amps
superimposed on rated load (JEDEC method)
Typical Therm3a0l Resistance (Note 2)
Typical Junction Capacitance (Note 1)
20
Operating Temperature Range
RΘJA
CJ
TJ
 
  500
-55 to +125
300
40
V CE = 20 V120
T J = 25 °C
 
 
-55 to +150
℃/W
PF
Storage Temperature Range
 
10
CHARACTERISTICS
C eb TSTG
- 65 to +175
200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum For7w.0ard Voltage at 1.0A DC
VF
0.50 0.70
0.85
0.9 0.92 Volts
Maximum Ave5r.0age Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
 
IR
C cb
100
0.5
10
 
mAmps
NOTES:
3.0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
  2- Thermal Res2i.s0t0a.1nce 0F.r2om0.3Junct0io.5n to1A.0mbie2n.0t 3.0 5.0
10
  REVERSE VOLTAGE (VOLTS)
20 30
Figure 9. Capacitance
50
70
50
1.0
2.0 3.0 5.0 7.0 210
20 30 50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 10. Current– Gain Bandwidth Product
201220-1121-06
WILWLAILSLAESLEECLETCRTORNOICNICCOCROPR.P.

4페이지










MMBT2222ALT1 전자부품, 판매, 대치품
WILLAS
FM120-M+
MMBT2222(A)LTTH1RU
1G.0AeSnUReFrAaCEl MPOuUNrTpSoCsHOeTTTKrYaBnARsRiIEsRtSRoO ErDC-T1I2F3IE+RSP-A2C0VK-A2G0E0V
FM1200-M+
Pb Free Product
Features
 Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
 OLorwdperorfiinlegsurIfnacfeomromunatetdioapnp:lication in order to
SOD-123H
optimize board space.
Low power loss, hDigehveicffeic PieNnc y.
Packing  0.146(3.7)
High currePnat rcta pNaubimlityb, elorw Gfo(1rw)WardSv oltage drop.
0.130(3.3)
Tape&Reel: 3 Kpcs/Reel 
High surge capability.
NGoutea:r d(1ri)n RgofoHrSo pvreorvdoulctat gfoerp proatcekcitniogn c.ode suffix ”G”Halogen free product for packing code suffix “H” 
0.012(0.3) Typ.
•• 
U   ltra high-speed switching.
Silicon epitaxial planar chip,
met
al
sili
con
junction.
0.071(1.8)
0.056(1.4)
  Lead-free parts meet environmental standards of
MIL-STD-19500 /228
 RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
 Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
  Method 2026
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
Mounting Position : Any
***Disclaimer*** 
Dimensions in inches and (millimeters)
Weight :WApIpLrLoAxiSm aretesde0r.v0e11s gtrhaem right to make changes without notice to any product 
specMifAicXaIMtioUnM hReAreTiInN, GtoS mANakDeE cLoErCreTcRtiIoCnAsL, mCHoAdRifiAcCatTioEnRsIS, eTnIChSancements or other 
Ratings at 2c5hanagmebsie.n Wt teImLLpeArSat uorer uannleysos noteh eorwnis ietss pbeecifhieadl.f assumes no responsibility or liability 
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitfivoerl oaand,yd eerrarteorcsu rroern tinbya2c0c%uracies. Data sheet specifications and its information 
containeRdA TaINreG Sintended to proSvYiMdBeO aL  FpMr1o20d-MuHcFtM d13e0s-McHriFpMt1i4o0-nMH oFnM1ly50. -M"THyFMp1i6c0a-Ml"H pFMa1r8a0m-MHeFtMe1r1s0 0-MH FM1150-MH FM1200-MH UNIT
Marking Codwe hich may be included on WILLAS data1 2sheet1s3 and/ o14r spec1if5icatio1n6s can  18
10
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100
Maximum RMaSnVdo ldtaoge vary in different applicaVtRiMoSns an1d4 actu2a1l perfo2r8manc3e5 may v42ary ove5r6 time. 70
115 120
150 200 Volts
105 140 Volts
Maximum DCWBlIoLcLkiAngSV dolotaeges not assume any liVaDbCility a2r0ising o3u0t of th40e appl5i0cation6 o0 r  80 100 150 200 Volts
 
Maximum Avuersaege oFfo rawnaryd RpercotidfieudcCtu rorern tcircuit. 
IO
 
1.0 Amps
  
 Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30 Amps
TTOyypppeiirccaaatllinTJguhneTcremtWlimioafnpelIeRLCrsLeaastapAuiasvrSectiai ntRnpacganrenc oeig(mNde(Nouptoectlea2t)s1n )at roer  nootht edre asipgpRnCTlΘeiJJJcdAa,t iinotnesn idnet-ed5n5 odto  re +ad1u 2ft5ohro lrifizeesdu fsotra iunsien  gin o1 4mr20 0oetdhiecar lr,  - e5l5attoe+d1 50
℃/W
PF
Storage TemapeprpatluirceaRtainognes where a failure orT mSTGalfunction of component or circu-it6r5yt om+1a7y5 directly 
  or indirectly cause injury or threaten a life without expressed written approval 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Foorwfa Wrd VILolLtaAgeSa. tC1u.0sAtDoCmers using or sVeFlling WILLAS com0.5p0onents for 0u.7s0e in 
0.85
0.9 0.92 Volts
Maximum Avseuracghe  RaepveprsliecCautriroennt sa td@o TsAo= 2a5t their IoRwn risk and shall agree to fully indem0.5nify WILLAS 
Rated DC Blocking Voltage
@T A=125℃
10
  Inc and its subsidiaries harmless against all claims, damages and expenditures. 
 NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
mAmp
2- Thermal Resistance From Junction to Ambient
 
 
 
20122-01112-06
WILLWAILSLEALSEECLTERCOTRNOICNCICOCROPR. P.

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MMBT2222ALT1

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MMBT2222ALT1

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