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PDF MMBT2369LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2369LT1 | |
| Descripción | Switching Transistors | |
| Fabricantes | WILLAS | |
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WILLAS
FM120-M+
MMBT2369(A)LTTH1RU
1.0A SURSFAwCEitMcOhUNiTnSgCHTOTrTaKYnBsARisRItEoR RrEsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
FzeWaetduecrlearse that
the
material
of
product
compliance
with
RoHS
Package
requirements.
outline
• BaPtbc-hFprereocpeascskdaegseigisn,aevxacilealblelent power dissipation offers
better reverse leakage current and thermal resistance.
• LoRwoHprSopfirleodsuucrtfafocrepmacokuinngtecdoadpepsluicffaixtio”Gn”in order to
SOD-123H
opHtaimloigzeenbforeaerdpsropdauccet.for packing code suffix “H”
• LoMwopisotuwreerSloesnss,ithivigithy eLfefivceiel n1cy.
• OHRigDhEcuRrIrNeGnt IcNaFpOabRilMityA, TloIOw Nforward voltage drop.
• High surge capability.
• GuardDrienvgicfoer overvoltageMparroktiencgtion.
Shipping
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• UltMraMhBigTh23-s6p9eLeTd1 switching.M1J
3000/Tape & Reel
• SilMicMonBeTp2i3ta69xAiaLl Tp1lanar chip1, JmAetal silicon3j0u0n0c/tTiaopne. & Reel
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MMAIXL-ISMTUDM-1R95A0T0IN/2G28S
SOT -23
• RoHS product for packing code suffix "G"
Halogen fRreaetinpgroduct for packing coSdyemsbuofflix "H" Value
Unit
M eCcolhlecatonr–iEcmaittlerdVaolttaage
V CEO
15 Vdc
•
EpCooxlyle:ctUoLr–9E4m-Vitt0erraVtoeltdagfleame
r
e
ta
rVd
ant
CES
40
•
•
CaCsoell:ecMtoorl–dBeadspelVaoslttiacg, eSOD-123HV CBO
Terminals :Plated terminals, solderable
per
40 ,
MIL-STD-750
Emitter–Base Voltage
Method 2026
V EBO
4.5
Vdc
Vdc
Vdc
• PoClaorllietyct:oIrnCduicrraetnetd—bCy ocnattinhuooduesbandI C
200 mAdc
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
3
CO0.L03L1E(C0.T8O) TRyp.
1
BASE
Dimensions in inches and (millimeters)
•TMHEouRnMtinAgLPCoHsiAtiRonA:CATnEyRISTICS
• Weight : ApprCohxaimraactteedris0t.i0c11 gram
Symbol
Max Unit
2
EMITTER
TotalMDAevXicIeMDUisMsipaRtiAonTFINR–G5SBoAaNrdD, (1E) LECTRICAPLD CHARAC2T2E5RISTICmSW
Ratings at 2DT5Ae℃=ra2tae5m°aCbbioevnet 2te5m°Cperature unless otherwise specified.
1.8 mW/°C
Single phasTehhearmlf awlaRvees, i6st0aHnzc,er,eJsuinstcivtieonotfoinAdmucbtiievnet load.
For capacitiTvoetalol aDde,vdiceeraDteissciupraretionnt by 20%
RθJA
PD
556 °C/W
300 mW
Alumina SuRbAsTtrIaNteG,S(2) TA = 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking CodeDerate above 25°C
12 13 2.414 m15W/°C 16 18 10 115 120
Maximum ReTcuhrerremntaPl ReaeksiRsteavnecrese, JVuonltcatgioen to Ambient VRRM
2R0θJA 30 41470
5°0C/W 60
80 100 150 200 Volts
Maximum RMJSunVcotilotangeand Storage Temperature
VRMS
T1J4, Tstg 21 –55 to2+8150 35°C 42
56
70
105 140 Volts
Maximum DC Blocking Voltage
DEVICE MARKING
Maximum Average Forward Rectified Current
VDC 20 30 40 50 60
80 100 150 200 Volts
IO 1.0 Amps
MMBT2369LT1 = M1J , MMBT2369A LT1 = 1JA
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimpEosLeEd ConTrRateICd AloaLd C(JHEDAERCAmCetThoEdR) ISTICS (TA = 25°C unless otherwise noted.)
Typical Thermal ResistancCe h(Naoratect2e)ristic
Typical Junction Capacitance (Note 1)
RΘJA
CJ
Symbol
Min
OperatinOg TFeFmCpeHraAtuRreARCaTngEeRISTICS
TJ -55 to +125
30
Typ
4M0ax
120
U nit
-55 to +150
Amps
℃/W
PF
℃
Storage TemCpoelrlaetcutroer–REamngiteter Breakdown Voltage(3) TSTG
(I C = 10 mAdc, I B = 0)
V (BR)CEO
15
- 65 to +175
— — Vdc
℃
CollectoCrH–EAmRAittCeTr EBRreISaTkdICoSwn Voltage
Maximum Fo(rIwCa=rd1V0oµltAadgec,aVt 1B.E0=A0D)C
Maximum AvCeorallgeectRore–vBearsseeCBurreraenkdt aotwn@VToAlt=a2g5e℃
Rated DC Bl(oIcCk=ing10VoµlAtadgce, I E = 0)
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
V (BR)CES
0.5040
—0.70
—
0V.8d5c
0.9 0.92 Volts
IR V (BR)CBO
40
0.5
— 10— Vdc
mAmp
NOTES: Emitter–Base Breakdown Voltage
1- Measured a(tI 1E =M1H0Z µanAddacp, pI lCie=d 0re)verse voltage of 4.0 VDC.
V (BR)EBO
4.5
— — Vdc
2- Thermal ReCsoisltlaenccteorFCroumtoJfuf nCcutiorrnetnot(AVmbCiBen=t 20Vdc, I E = 0)
I CBO
— — 0.4 µAdc
( V CB = 20Vdc, I E = 0, T A=150 °C)
— — 30
Collector Cutoff Current
( V CE = 20Vdc, V BE = 0)
MMBT2369A I CES
— — 0.4 µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
201220-1112-06
WILLWAILSLEALSEECLTERCOTRNOICNCICOCROPR. P.
1 page  
WILLAS
FM120-M+
MMBT2369(A)LTTH1RU
1.0A SURSFAwCEitMcOhUNiTnSgCHTOTrTaKYnBsARisRIEtRoRrEsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low2p0o0 wer loss, high efficiency.
• High current capability, low forward voltage drop. T J = 125°C
• High surge capability.
• Gua1r0d0ring for overvoltage protection.
• Ultra high-speed switching.
75°C
25°C
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
–15°C
MIL-S50TD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
–55°C
Mechanical data
• Epox2y0: UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
V CE = 1 V
0.071(1.8)
0.056(1.4)
TJ= 25°C and 75°C
0.040(1.0)
0.024(0.6)
• Case : M1 olded plastic, S2OD-123H
5
10 20
0.031(0.8) Typ.
• Terminals :Plated terminals, solderable per MIL-STIDC-,7C5O0,LLECTOR CURRENT (mA)
50 100
0.031(0.8) Typ.
Method 2026
Figure 13. Minimum Current Gain Characteristics
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mou1.n4ting Position : Any
1.0
• Weight : Aβ pF =pr1o0ximated 0.011 gram
1.2 T J = 25°C
0.5
θ VC for V CE(sat)
1.0 MAXIMUM RATINGS ANMDAXEVLBEE(saCt) TRICAL CHARACTE0RISTICAPSPROXIMATE DEVIATION
Ratings at 25℃ ambient temperature unless otherwise specified.
FROM NOMINAL
Single
phase0.h8alf
wave,
60Hz,
resistive
of
induMcItNivVe
load.
BE(sat)
For capacitive load, derate current by 20%
–0.5
–0.1
–55°C to +25°C
θ VC ±0.15 mV/°C
θ VB ±0.4 mV/°C
25°C to 125°C
±0.15 mV/°C
±0.3 mV/°C
(25°C to 125°C)
(–55°C to +25°C)
(–55°C to +25°C)
0.6 RATINGS
Marking Code
Maximum Rec0u.4rrent Peak Reverse Voltage
Maximum RMS Voltage
0.2
Maximum DC Blo1cking Vol2tage
5
SYMBOL
FM120-MH
FM130-MH
FM140-MH FM150-MH
–1.5
FM160-MH
FM180-MH
FM1100(2-M5°HCFtMo 1112550°-CM)H
FM1200-MH
UNIT
MAX V VCER(saRt)M
12
20
13 14
30 –24.00
15
50
θ VB for16V60BE(sat)
18
80
10
100
115 120
150 200 Volts
VRMS
14
21
28
35
42
56
70
105 140 Volts
10
20 VDC 50 20 100 30
–2.5
400
10 50 20 3060 40
5800 60 17000 80 91050 100 200
Volts
Maximum Average Forward RI Cec, tCifiOedLLCEuCrreTnOt R CURRENTIO(mA)
Peak Forward Surge CurreFnitg8u.3rems1s4in. gSleahtaulfrasitnieo-wnaVveolta IgFSeMLimits
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
-55 to +125
I C , COL1L.E0CTOR CURRENT (mA)
Figure 15. Typi cal Temperature Coefficients
30
40
120
- 65 to +175
-55 to +150
Amps
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 Volts
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
@T A=125℃
IR
0.5
mAmp
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
201220-1112-06
WILLWAILSLEALSEECLTERCOTRNOICNCICOCROPR. P.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MMBT2369LT1.PDF ] | |
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