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MMBT2369ALT1 데이터시트 PDF




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MMBT2369ALT1 데이터시트, 핀배열, 회로
WILLAS
FM120-M+
MMBT2369(A)LTTH1RU
1.0A SURSFAwCEitMcOhUNiTnSgCHTOTrTaKYnBsARisRItEoR RrEsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
FzeWaetduecrlearse that
the
material
of
product
compliance
with
RoHS
Package
requirements.
outline
BaPtbc-hFprereocpeascskdaegseigisn,aevxacilealblelent power dissipation offers
better reverse leakage current and thermal resistance.
LoRwoHprSopfirleodsuucrtfafocrepmacokuinngtecdoadpepsluicffaixtio”Gnin order to
SOD-123H
opHtaimloigzeenbforeaerdpsropdauccet.for packing code suffix “H”
LoMwopisotuwreerSloesnss,ithivigithy eLfefivceiel n1cy.
OHRigDhEcuRrIrNeGnt IcNaFpOabRilMityA, TloIOw Nforward voltage drop.
High surge capability.
GuardDrienvgicfoer overvoltageMparroktiencgtion.
Shipping
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
UltMraMhBigTh23-s6p9eLeTd1 switching.M1J
3000/Tape & Reel
SilMicMonBeTp2i3ta69xAiaLl Tp1lanar chip1, JmAetal silicon3j0u0n0c/tTiaopne. & Reel
0.071(1.8)
0.056(1.4)
Lead-free parts meet environmental standards of
MMAIXL-ISMTUDM-1R95A0T0IN/2G28S
SOT -23
RoHS product for packing code suffix "G"
Halogen fRreaetinpgroduct for packing coSdyemsbuofflix "H" Value
Unit
M eCcolhlecatonr–iEcmaittlerdVaolttaage
V CEO
15 Vdc
EpCooxlyle:ctUoLr–9E4m-Vitt0erraVtoeltdagfleame
r
e
ta
rVd
ant
CES
40
CaCsoell:ecMtoorldBeadspelVaoslttiacg, eSOD-123HV CBO
Terminals :Plated terminals, solderable
per
40 ,
MIL-STD-750
Emitter–Base Voltage
Method 2026
V EBO
4.5
Vdc
Vdc
Vdc
PoClaorllietyct:oIrnCduicrraetnetdbCy ocnattinhuooduesbandI C
200 mAdc
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
3
CO0.L03L1E(C0.T8O) TRyp.
1
BASE
Dimensions in inches and (millimeters)
TMHEouRnMtinAgLPCoHsiAtiRonA:CATnEyRISTICS
Weight : ApprCohxaimraactteedris0t.i0c11 gram
Symbol
Max Unit
2
EMITTER
TotalMDAevXicIeMDUisMsipaRtiAonTFINR–G5SBoAaNrdD, (1E) LECTRICAPLD CHARAC2T2E5RISTICmSW
Ratings at 2DT5Ae=ra2tae5m°aCbbioevnet 2te5m°Cperature unless otherwise specified.
1.8 mW/°C
Single phasTehhearmlf awlaRvees, i6st0aHnzc,er,eJsuinstcivtieonotfoinAdmucbtiievnet load.
  For capacitiTvoetalol aDde,vdiceeraDteissciupraretionnt by 20%
RθJA
PD
556 °C/W
300 mW
Alumina SuRbAsTtrIaNteG,S(2) TA = 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking CodeDerate above 25°C
12 13 2.414 m15W/°C 16 18 10 115 120
Maximum ReTcuhrerremntaPl ReaeksiRsteavnecrese, JVuonltcatgioen to Ambient VRRM
2R0θJA 30 41470
5°0C/W 60
80 100 150 200 Volts
Maximum RMJSunVcotilotangeand Storage Temperature
VRMS
T1J4, Tstg 21 –55 to2+8150 35°C 42
56
70
105 140 Volts
Maximum DC Blocking Voltage
DEVICE MARKING
Maximum Average Forward Rectified Current
VDC 20 30 40 50 60
80 100 150 200 Volts
IO 1.0 Amps
  MMBT2369LT1 = M1J , MMBT2369A LT1 =  1JA
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimpEosLeEd ConTrRateICd AloaLd C(JHEDAERCAmCetThoEdR) ISTICS (TA = 25°C unless otherwise noted.)
Typical Thermal ResistancCe h(Naoratect2e)ristic
Typical Junction Capacitance (Note 1)
RΘJA
CJ
 
Symbol  
Min
OperatinOg TFeFmCpeHraAtuRreARCaTngEeRISTICS
TJ -55 to +125
 
30
Typ
 
4M0ax
120
 
U nit
-55 to +150
 
Amps
℃/W
PF
Storage TemCpoelrlaetcutroer–REamngiteter Breakdown Voltage(3) TSTG
  (I C = 10 mAdc, I B = 0)
V (BR)CEO
15
- 65 to +175
— — Vdc
CollectoCrH–EAmRAittCeTr EBRreISaTkdICoSwn Voltage
Maximum Fo(rIwCa=rd1V0oµltAadgec,aVt 1B.E0=A0D)C
Maximum AvCeorallgeectRorevBearsseeCBurreraenkdt aotwn@VToAlt=a2g5e
Rated DC Bl(oIcCk=ing10VoµlAtadgce, I E = 0)
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
V (BR)CES
0.5040
0.70
0V.8d5c
0.9 0.92 Volts
IR V (BR)CBO
40
0.5
10— Vdc
 
mAmp
 
NOTES: Emitter–Base Breakdown Voltage
1- Measured a(tI 1E =M1H0Z µanAddacp, pI lCie=d 0re)verse voltage of 4.0 VDC.
V (BR)EBO
4.5
— — Vdc
2- Thermal ReCsoisltlaenccteorFCroumtoJfuf nCcutiorrnetnot(AVmbCiBen=t 20Vdc, I E = 0)
I CBO
— — 0.4 µAdc
  ( V CB = 20Vdc, I E = 0, T A=150 °C)
— — 30
  Collector Cutoff Current
( V CE = 20Vdc, V BE = 0)
MMBT2369A I CES
— — 0.4 µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
201220-1112-06
WILLWAILSLEALSEECLTERCOTRNOICNCICOCROPR. P.




MMBT2369ALT1 pdf, 반도체, 판매, 대치품
WILLAS
FM120-M+
MMBT2369(A)LTTH1RU
1.0A SURSFAwCEitMcOhUNiTnSgCHOTTrTaKYnBsARiRsIEtRoRrEsCTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Lo5w00profile surface mounted application in order to
optimizeVboCCa=rd1s0pVace.
Q T,β F =10
Low power loss2,5h°Cigh efficiency.
Hig20h0current ca1p0a0b°Cility,
High surge capability.
loQw
Tf,oβrwF=a4r0d
voltage
drop.
Gu1a00rdring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lea5d0-free parts meet environmental standards of
MIL-STD-19500 Q/22A ,8V CC=10V
RoHS product for packing code suffix "G"
Halo20gen free product for packing code QsuAff,iVx C"HC =" 3 V
Mechanical data
Epo1x0y1: UL94-2V0 rated f5lame re1t0ardant 20
50 100
Case : Molded plastic, SOD-123H
Terminals :PlateIdCt,eCrmOiLnLaElsC,TsOoRldCerUaRbRleEpNeTr (MmIAL)-STD-750,
MetFhiogdu2re0286. Maximum Charge Data
Polarity : Indicated by cathode band
Package outline
SOD-123H
+5 V
t1
V
0
< 1 ns
0.146(3.7)
0.130(3.3)
3 V 270
10 pF MAX
4.3 k
PULSE WIDTH (t 1 ) = 5 ms
DUTY CYCLE = 2%
0.012(0.3) Typ.
VALUES REFER TO
I C = 10 mA TEST
0.071(1.8)
0.056(1.4)
C s * < 4 pF
Figure 9. Q T Test Circuit
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
C < C OPT
+6 V
t1
C=0
0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C C OPT
Ratings at 25℃ ambient temperature unless otherwise specified.
–4 V
< 1 ns
Single phase half wave, 60Hz, resistiveToIMfEinductive load.
  For capacitive load, derate current by 20%
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
980
10 V
500
C s * < 3 pF
Marking Code
RAFTiIgNuGrSe 10. Turn–Off WaSvYeMfoBrOmL FM120-MH FM130-MHFFiMg1u40r-eMH11F.MS15t0o-MraHgFeM1T6i0m-MeH EFMq1u8i0v-MaHleFnMt1T1e00s-Mt HCiFrMc1u1i5t0-MH FM1200-MH UNIT
12 13
14 15
16
18 10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140 Volts
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum Average1.F0 orward Rectified Current
IO
1.0 Amps
  
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on ra0t.e8d load (JEDEC method)
Typical Thermal Resistance (Note 2I )C=3mA
IC=10RmΘAJA
Typical Junction Capacitance (Note 1)
Operating Temper0a.6ture Range
CJ
TJ
IC =30mA
 
-55 to +125
I C=50mA
 
30 TJ= 25°C
40 I C=100  mA
120  
  -55 to +150
 
Amps
℃/W
PF
Storage Temperature Range
 
0.4CHARACTERISTICS
TSTG
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 Volts
Maximum Average0.R2 everse Current at @T A=25℃
Rated DC Blocking V0o.0lt2age
0.05 @T A=120.51
 
IR
0.2
0.5  
mAmp
0.5 1 2 10 5 10 20
NOTES:
I B , BASE CURRENT (mA)
1- Measured at 1 MHZ and applied reverse voltaFgiegouf r4e.01V2D.CM. aximum Collector Saturation Voltage Characteristics
2- Thermal Resistance From Junction to Ambient
 
 
201220-1112-06
WILWLAILSLEALSEECLTERCOTRNOICNICCOCROPR.P.

4페이지










MMBT2369ALT1 전자부품, 판매, 대치품
WILLAS
FM120-M+
MMBT2369(A)LTTH1RU
1.0A SURSFAwCEitMcOUhNiTnSgCHOTTrTaKYnBsARiRsIEtRoSRrOE sDC-T1I2F3IE+RSP-A2C0VK-A2G0E0V
FM1200-M+
Pb Free Product
Features
 Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
 OLorwdperorfiilne sgurIfancfeomromunatetdiaopnpl:ication in order to
SOD-123H
optimize board space.
Low power loss, hDigehveicffeic iPenNc y.
Packing  0.146(3.7)
High
High
currePntacratp Nabuilmityb, leorw Gfo(r1w)aWrdSv oltage
surge capability.
drop.
0.130(3.3)
Tape&Reel: 3 Kpcs/Reel 
NGoutaer:d (r1in) gRofoHr So vperrovdoultcatg feopr rpoateckcitniogn c. ode suffix ”G”Halogen free product for packing code suffix “H” 
0.012(0.3) Typ.
 U  l tra high-speed switching.
Silicon epitaxial planar chip,
metal
silicon
junctio
n.
0.071(1.8)
0.056(1.4)
 Lead-free parts meet environmental standards of
MIL-STD-19500 /228
 RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
 Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
  Method 2026
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Mounting Position : Any
***Disclaimer*** 
Weight : AWppILroLxAimS arteesde0r.0v1e1sg trhame right to make changes without notice to any product 
speMciAfiXcaIMtiUonM hReAreTiInN,G tSo AmNaDkeE cLoErCreTcRtIiConAsL, CmHoAdRifAicCaTtiEoRnIsS, TeInChSancements or other 
Ratings at 2c5hanamgebise.n tWteImLpLeAraStu oreru annleyssoonthee rownis eitssp beceifhiead.lf assumes no responsibility or liability 
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitivfoe rlo aadn,yd eerartreocrusr roenrt ibnya2c0c%uracies. Data sheet specifications and its information 
containReAdT aINrGeS intended to proSvYiMdBeO La FpMr12o0d-MuHcFtM 1d3e0-sMcHrFiMp1t4i0o-MnH oFMn1l5y0.- M"HTFyMp1i6c0a-MlH" FpMa1r8a0-mMHeFtMe1r1s00 -MH FM1150-MH FM1200-MH UNIT
MMaarxkiminugmCoRdeewcurhreincthP emakaRye vbeers einVcolltuagdeed on WILVLRARMS data1220 sheet13s30 and/ 41o04r spec51i05ficatio16n60s can 
18
80
10
100
Maximum RMaSnVdo ltdagoe vary in different applicVaRtMioSns an14d actu2a1l perfo28rmanc3e5 may 4v2ary ove56r time.7 0
115 120
150 200 Volts
105 140 Volts
Maximum DCWBloILckLinAgSV odltoagees not assume any liVaDbCility a2r0ising o30ut of t4h0e app5li0cation6 0or  80 100 150 200 Volts
 
Maximum Aveurasgee oFofr waanryd  Rpercotifdieud cCtu rorern tcircuit. 
IO
 
1.0 Amps
  
 Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30 Amps
TTOyypppeiirccaaatllinTJguhneTcremtiWlmoiafnpleeIRCLreaasLstpauAiasrvectSaiitR nnapcangernc oeg(iNemd(Noutopetcel2at)1sn) at roer  nootht edre asipgRpnCTΘleJiJJcAda,t iinotnesn idnet-e5d5n otdo  re +ad1u2 f5tohro lrifizeesdu fsotra iunsien   gin o14 2mr00 oetdhiecar lr,  - e55latote+d15  0
℃/W
PF
Storage TempaepraptulriecaRtainogens where a failure orT SmTGalfunction of component or circu-i6t5ryto m+1a7y5 directly 
  or indCHirAeRcAtClyT EcRaISuTsIeCS injury or thSrYeMaBOteLnFM a1 2l0i-fMeH wFMi1t3h0-oMuHtF Me1x4p0-MreHsFsMe15d0 -MwHrFiMtt1e60n-M aHpFMp1r8o0-vMaHlF M1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forowfa rWd VIoLltLaAgeSa.t C1.u0AstDoCmers using or VsFelling WILLAS co0m.5p0onents for0 u.7s0e in 
0.85
0.9 0.92 Volts
Maximum AvesruagcehR aevpeprsleicCautrrieonnt ast d@oT sAo=2 a5℃t their IRown risk and shall agree to fully inde0m.5nify WILLAS 
Rated DC Blocking Voltage
@T A=125℃
10
  Inc and its subsidiaries harmless against all claims, damages and expenditures. 
 NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
mAmps
2- Thermal Resistance From Junction to Ambient
 
 
 
201220-1112-06
WILWLAILSLAESLEECLTERCOTRNOICNICCOCROPR.P.

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