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부품번호 | MMBT2369ALT1 기능 |
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기능 | Switching Transistors | ||
제조업체 | WILLAS | ||
로고 | |||
전체 7 페이지수
WILLAS
FM120-M+
MMBT2369(A)LTTH1RU
1.0A SURSFAwCEitMcOhUNiTnSgCHTOTrTaKYnBsARisRItEoR RrEsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
FzeWaetduecrlearse that
the
material
of
product
compliance
with
RoHS
Package
requirements.
outline
• BaPtbc-hFprereocpeascskdaegseigisn,aevxacilealblelent power dissipation offers
better reverse leakage current and thermal resistance.
• LoRwoHprSopfirleodsuucrtfafocrepmacokuinngtecdoadpepsluicffaixtio”Gn”in order to
SOD-123H
opHtaimloigzeenbforeaerdpsropdauccet.for packing code suffix “H”
• LoMwopisotuwreerSloesnss,ithivigithy eLfefivceiel n1cy.
• OHRigDhEcuRrIrNeGnt IcNaFpOabRilMityA, TloIOw Nforward voltage drop.
• High surge capability.
• GuardDrienvgicfoer overvoltageMparroktiencgtion.
Shipping
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• UltMraMhBigTh23-s6p9eLeTd1 switching.M1J
3000/Tape & Reel
• SilMicMonBeTp2i3ta69xAiaLl Tp1lanar chip1, JmAetal silicon3j0u0n0c/tTiaopne. & Reel
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MMAIXL-ISMTUDM-1R95A0T0IN/2G28S
SOT -23
• RoHS product for packing code suffix "G"
Halogen fRreaetinpgroduct for packing coSdyemsbuofflix "H" Value
Unit
M eCcolhlecatonr–iEcmaittlerdVaolttaage
V CEO
15 Vdc
•
EpCooxlyle:ctUoLr–9E4m-Vitt0erraVtoeltdagfleame
r
e
ta
rVd
ant
CES
40
•
•
CaCsoell:ecMtoorl–dBeadspelVaoslttiacg, eSOD-123HV CBO
Terminals :Plated terminals, solderable
per
40 ,
MIL-STD-750
Emitter–Base Voltage
Method 2026
V EBO
4.5
Vdc
Vdc
Vdc
• PoClaorllietyct:oIrnCduicrraetnetd—bCy ocnattinhuooduesbandI C
200 mAdc
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
3
CO0.L03L1E(C0.T8O) TRyp.
1
BASE
Dimensions in inches and (millimeters)
•TMHEouRnMtinAgLPCoHsiAtiRonA:CATnEyRISTICS
• Weight : ApprCohxaimraactteedris0t.i0c11 gram
Symbol
Max Unit
2
EMITTER
TotalMDAevXicIeMDUisMsipaRtiAonTFINR–G5SBoAaNrdD, (1E) LECTRICAPLD CHARAC2T2E5RISTICmSW
Ratings at 2DT5Ae℃=ra2tae5m°aCbbioevnet 2te5m°Cperature unless otherwise specified.
1.8 mW/°C
Single phasTehhearmlf awlaRvees, i6st0aHnzc,er,eJsuinstcivtieonotfoinAdmucbtiievnet load.
For capacitiTvoetalol aDde,vdiceeraDteissciupraretionnt by 20%
RθJA
PD
556 °C/W
300 mW
Alumina SuRbAsTtrIaNteG,S(2) TA = 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking CodeDerate above 25°C
12 13 2.414 m15W/°C 16 18 10 115 120
Maximum ReTcuhrerremntaPl ReaeksiRsteavnecrese, JVuonltcatgioen to Ambient VRRM
2R0θJA 30 41470
5°0C/W 60
80 100 150 200 Volts
Maximum RMJSunVcotilotangeand Storage Temperature
VRMS
T1J4, Tstg 21 –55 to2+8150 35°C 42
56
70
105 140 Volts
Maximum DC Blocking Voltage
DEVICE MARKING
Maximum Average Forward Rectified Current
VDC 20 30 40 50 60
80 100 150 200 Volts
IO 1.0 Amps
MMBT2369LT1 = M1J , MMBT2369A LT1 = 1JA
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimpEosLeEd ConTrRateICd AloaLd C(JHEDAERCAmCetThoEdR) ISTICS (TA = 25°C unless otherwise noted.)
Typical Thermal ResistancCe h(Naoratect2e)ristic
Typical Junction Capacitance (Note 1)
RΘJA
CJ
Symbol
Min
OperatinOg TFeFmCpeHraAtuRreARCaTngEeRISTICS
TJ -55 to +125
30
Typ
4M0ax
120
U nit
-55 to +150
Amps
℃/W
PF
℃
Storage TemCpoelrlaetcutroer–REamngiteter Breakdown Voltage(3) TSTG
(I C = 10 mAdc, I B = 0)
V (BR)CEO
15
- 65 to +175
— — Vdc
℃
CollectoCrH–EAmRAittCeTr EBRreISaTkdICoSwn Voltage
Maximum Fo(rIwCa=rd1V0oµltAadgec,aVt 1B.E0=A0D)C
Maximum AvCeorallgeectRore–vBearsseeCBurreraenkdt aotwn@VToAlt=a2g5e℃
Rated DC Bl(oIcCk=ing10VoµlAtadgce, I E = 0)
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
V (BR)CES
0.5040
—0.70
—
0V.8d5c
0.9 0.92 Volts
IR V (BR)CBO
40
0.5
— 10— Vdc
mAmp
NOTES: Emitter–Base Breakdown Voltage
1- Measured a(tI 1E =M1H0Z µanAddacp, pI lCie=d 0re)verse voltage of 4.0 VDC.
V (BR)EBO
4.5
— — Vdc
2- Thermal ReCsoisltlaenccteorFCroumtoJfuf nCcutiorrnetnot(AVmbCiBen=t 20Vdc, I E = 0)
I CBO
— — 0.4 µAdc
( V CB = 20Vdc, I E = 0, T A=150 °C)
— — 30
Collector Cutoff Current
( V CE = 20Vdc, V BE = 0)
MMBT2369A I CES
— — 0.4 µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
201220-1112-06
WILLWAILSLEALSEECLTERCOTRNOICNCICOCROPR. P.
WILLAS
FM120-M+
MMBT2369(A)LTTH1RU
1.0A SURSFAwCEitMcOhUNiTnSgCHOTTrTaKYnBsARiRsIEtRoRrEsCTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Lo5w00profile surface mounted application in order to
optimizeVboCCa=rd1s0pVace.
Q T,β F =10
• Low power loss2,5h°Cigh efficiency.
•
•
Hig20h0current ca1p0a0b°Cility,
High surge capability.
loQw
Tf,oβrwF=a4r0d
voltage
drop.
• Gu1a00rdring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lea5d0-free parts meet environmental standards of
MIL-STD-19500 Q/22A ,8V CC=10V
• RoHS product for packing code suffix "G"
Halo20gen free product for packing code QsuAff,iVx C"HC =" 3 V
Mechanical data
• Epo1x0y1: UL94-2V0 rated f5lame re1t0ardant 20
50 100
• Case : Molded plastic, SOD-123H
• Terminals :PlateIdCt,eCrmOiLnLaElsC,TsOoRldCerUaRbRleEpNeTr (MmIAL)-STD-750,
MetFhiogdu2re0286. Maximum Charge Data
• Polarity : Indicated by cathode band
Package outline
SOD-123H
+5 V
t1
∆V
0
< 1 ns
0.146(3.7)
0.130(3.3)
3 V 270
10 pF MAX
4.3 k
PULSE WIDTH (t 1 ) = 5 ms
DUTY CYCLE = 2%
0.012(0.3) Typ.
VALUES REFER TO
I C = 10 mA TEST
0.071(1.8)
0.056(1.4)
C s * < 4 pF
Figure 9. Q T Test Circuit
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
C < C OPT
+6 V
t1
C=0
0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C C OPT
Ratings at 25℃ ambient temperature unless otherwise specified.
–4 V
< 1 ns
Single phase half wave, 60Hz, resistiveToIMfEinductive load.
For capacitive load, derate current by 20%
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
980
10 V
500
C s * < 3 pF
Marking Code
RAFTiIgNuGrSe 10. Turn–Off WaSvYeMfoBrOmL FM120-MH FM130-MHFFiMg1u40r-eMH11F.MS15t0o-MraHgFeM1T6i0m-MeH EFMq1u8i0v-MaHleFnMt1T1e00s-Mt HCiFrMc1u1i5t0-MH FM1200-MH UNIT
12 13
14 15
16
18 10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140 Volts
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum Average1.F0 orward Rectified Current
IO
1.0 Amps
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on ra0t.e8d load (JEDEC method)
Typical Thermal Resistance (Note 2I )C=3mA
IC=10RmΘAJA
Typical Junction Capacitance (Note 1)
Operating Temper0a.6ture Range
CJ
TJ
IC =30mA
-55 to +125
I C=50mA
30 TJ= 25°C
40 I C=100 mA
120
-55 to +150
Amps
℃/W
PF
℃
Storage Temperature Range
0.4CHARACTERISTICS
TSTG
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 Volts
Maximum Average0.R2 everse Current at @T A=25℃
Rated DC Blocking V0o.0lt2age
0.05 @T A=120.51℃
IR
0.2
0.5
mAmp
0.5 1 2 10 5 10 20
NOTES:
I B , BASE CURRENT (mA)
1- Measured at 1 MHZ and applied reverse voltaFgiegouf r4e.01V2D.CM. aximum Collector Saturation Voltage Characteristics
2- Thermal Resistance From Junction to Ambient
201220-1112-06
WILWLAILSLEALSEECLTERCOTRNOICNICCOCROPR.P.
4페이지 WILLAS
FM120-M+
MMBT2369(A)LTTH1RU
1.0A SURSFAwCEitMcOUhNiTnSgCHOTTrTaKYnBsARiRsIEtRoSRrOE sDC-T1I2F3IE+RSP-A2C0VK-A2G0E0V
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
•OLorwdperorfiilne sgurIfancfeomromunatetdiaopnpl:ication in order to
SOD-123H
optimize board space.
• Low power loss, hDigehveicffeic iPenNc y.
Packing 0.146(3.7)
•
•
High
High
currePntacratp Nabuilmityb, leorw Gfo(r1w)‐aWrdSv oltage
surge capability.
drop.
0.130(3.3)
Tape&Reel: 3 Kpcs/Reel
•NGoutaer:d (r1in) gRofoHr So vperrovdoultcatg feopr rpoateckcitniogn c. ode suffix ”G”;Halogen free product for packing code suffix “H”
0.012(0.3) Typ.
•
•
U l tra high-speed switching.
Silicon epitaxial planar chip,
metal
silicon
junctio
n.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
***Disclaimer***
• Weight : AWppILroLxAimS arteesde0r.0v1e1sg trhame right to make changes without notice to any product
speMciAfiXcaIMtiUonM hReAreTiInN,G tSo AmNaDkeE cLoErCreTcRtIiConAsL, CmHoAdRifAicCaTtiEoRnIsS, TeInChSancements or other
Ratings at 2c5h℃anamgebise.n tWteImLpLeAraStu oreru annleyssoonthee rownis eitssp beceifhiead.lf assumes no responsibility or liability
Single phase half wave, 60Hz, resistive of inductive load.
For capacitivfoe rlo aadn,yd eerartreocrusr roenrt ibnya2c0c%uracies. Data sheet specifications and its information
containReAdT aINrGeS intended to proSvYiMdBeO La FpMr12o0d-MuHcFtM 1d3e0-sMcHrFiMp1t4i0o-MnH oFMn1l5y0.- M"HTFyMp1i6c0a-MlH" FpMa1r8a0-mMHeFtMe1r1s00 -MH FM1150-MH FM1200-MH UNIT
MMaarxkiminugmCoRdeewcurhreincthP emakaRye vbeers einVcolltuagdeed on WILVLRARMS data1220 sheet13s30 and/ 41o04r spec51i05ficatio16n60s can
18
80
10
100
Maximum RMaSnVdo ltdagoe vary in different applicVaRtMioSns an14d actu2a1l perfo28rmanc3e5 may 4v2ary ove56r time.7 0
115 120
150 200 Volts
105 140 Volts
Maximum DCWBloILckLinAgSV odltoagees not assume any liVaDbCility a2r0ising o30ut of t4h0e app5li0cation6 0or 80 100 150 200 Volts
Maximum Aveurasgee oFofr waanryd Rpercotifdieud cCtu rorern tcircuit.
IO
1.0 Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30 Amps
TTOyypppeiirccaaatllinTJguhneTcremtiWlmoiafnpleeIRCLr‐eaasLstpauAiasrvectSaiitR nnapcangernc oeg(iNemd(Noutopetcel2at)1sn) at roer nootht edre asipgRpnCTΘleJiJJcAda,t iinotnesn idnet-e5d5n otdo re +ad1u2 f5tohro lrifizee‐sdu fsotra iunsien gin o14 2mr00 oetdhiecar lr, - e55latote+d15 0
℃/W
PF
℃
Storage TempaepraptulriecaRtainogens where a failure orT SmTGalfunction of component or circu-i6t5ryto m+1a7y5 directly
℃
or indCHirAeRcAtClyT EcRaISuTsIeCS injury or thSrYeMaBOteLnFM a1 2l0i-fMeH wFMi1t3h0-oMuHtF Me1x4p0-MreHsFsMe15d0 -MwHrFiMtt1e60n-M aHpFMp1r8o0-vMaHlF M1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forowfa rWd VIoLltLaAgeSa.t C1.u0AstDoCmers using or VsFelling WILLAS co0m.5p0onents for0 u.7s0e in
0.85
0.9 0.92 Volts
Maximum AvesruagcehR aevpeprsleicCautrrieonnt ast d@oT sAo=2 a5℃t their IRown risk and shall agree to fully inde0m.5nify WILLAS
Rated DC Blocking Voltage
@T A=125℃
10
Inc and its subsidiaries harmless against all claims, damages and expenditures.
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
mAmps
2- Thermal Resistance From Junction to Ambient
201220-1112-06
WILWLAILSLAESLEECLTERCOTRNOICNICCOCROPR.P.
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ MMBT2369ALT1.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MMBT2369ALT1 | Switching Transistors | WILLAS |
MMBT2369ALT1 | Switching Transistors | Motorola Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |