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PDF MMBT2907ALT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2907ALT1 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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WILLAS
FM120-M+
MMBT2907(A)LTTH1RU
1.0GA SeUnRFeACrEaMlOPUNuT rSpCHoOTsTeKY TBArRaRnIERsRisECtToIFrIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
PN•FBPeatacShtupilrroieccesossndesign, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
• Low profile surface mounted
RooHpStimprizoedubcotafrodr sppaacckien.g code
application
suffix "G",
i
n
order
t
o
H• aLlogwepnofwreeer plorsosd,uhcitgfhorepffaiccikeingcyc.ode suffix "H" .
M• oHisigtuhrceuSrreennstitcivaiptyabLielivtye,l l1ow forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
MA•XUIMltrUaMhigRhA-sTpINeeGdSswitching.
•
•
LSeilaicdo-Rnfareetiepnigptaaxritaslmpleaentaerncvhiripo,nSmmyeemtnabtloasllislitcao2nn9d0jau7Vrnadclsuti2oeo9fn0.7A
Unit
CMolIleLc-tSoTr–DE-m1i9tt5e0r 0Vo/2lta2g8e
V CEO
–40 –60
• RoHS product for packing code suffix "G"
CHoallelocgtoern–BfraeseepVroodltuacgtefor packingVcoCdBOe suffix "H" –60
Vdc
Vdc
MEmeittcerh–BaanseiVcoaltalgedata V EBO
–5.0 Vdc
•CEoplleocxtoyr:CUuLrr9e4n-tV—0 Craotnetdinufloaumse retIaCrdant
–600
mAdc
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT–23
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
TH•ETReMrmAiLnaClsH:APRlaAteCdTteErRmIiSnTaIlsC,Ss
old
er
able
p
er
,
MIL-STD-750
0.031(0.8) Typ.
3 0.031(0.8) Typ.
COLLECTOR
Method 2026
•
Polarity
:
Characteristic
Indicated by cathode
band
Total Device Dissipation FR– 5 Board, (1)
Symbol
PD
Max
225
Unit Dimensions in inc1hes and (millimeters)
mW
BASE
•TMA o=u2n5t°iCng Position : Any
•DWereaitgehatb:oAvpep2r5o°xCimated 0.011 gram
1.8 mW/°C
2
EMITTER
Thermal Resistance, Junction to Ambient
RθJA 556 °C/W
Total DeMvicAeXDIisMsiUpaMtionRATINGS AND ELECTRIPCDAL CHARA30C0TERISTmICWS
Ratings Aatlu2m5i℃na Samubbsietrnatete, m(2p) eTrAa=tu2r5e°uCnless otherwise specified.
Single pDhaesraetehaalbf owvaeve2,56°C0Hz, resistive of inductive load.
2.4 mW/°C
For capaTchiteivrme alolaRde,sdisetraantecec,uJrurennctiobny t2o0A%mbient
Junction and SRtAorTaIgNeGTSemperature
RθJA 417 °C/W
SYMBOLTFJM, 1T2s0tg-MH FM–13505-MtoH +F1M51040-MH FM°C150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12 13
14 15 16
18 10
115 120
MaximDuEmVRICecEurMreAntRPKeaINk GReverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
MMBT2907LT1 = M2B, MMBT2907AL T1 = 2F
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
56 70 105 140 Volts
80 100 150 200 Volts
MaximEuLmECAvTeRraIgCeAFLorCwaHrdARReActCifiTedECRuISrreTnItCS (TA = 25°CIOunless otherwise noted.)
1.0
Amps
Peak Forward Surge CurrCehnta8r.a3cmtesrsisintgicle half sine-wave
IFSM
Symbol
Min
Ma x
30
Unit
Amps
superOimFpoFseCdHonArRatAedCloTaEd R(JIESDTEICCmSethod)
Typical Thermal Resistance (Note 2)
Collector–Emitter Breakdown Voltage(3)
Typical Junction Capacitance (Note 1)
RΘJA
CJ
V (BR)CEO
40
120
V dc
℃/W
PF
Operating(ITCe=m–p1e0ramtuAredRc,aInBg=e 0)
TJMMBT2907 -55 to +125
–40 —
-55 to +150
℃
Storage Temperature Range
MMBT2907A
TSTG
Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0)
V (BR)CBO
–60
–60
- —65 to +175
— Vdc
℃
Emitter–BaCsHeABRreAaCkTdEoRwInSTVIoClStage(I E = –10 µSAYdMc,BIOCL=F0M)120-MH FM130-VMH(BRF)MEB1O40-MH F–M51.050-MH FM16—0-MH FM18V0-dMcH FM1100-MH FM1150-MH FM1200-MH UNIT
MaximumCFoollrewcatordr CVoulttoafgfeCautr1re.0nAt( DVCCB = –30Vdc, I BE(OFFV) F= –0.5Vdc)
0I .C5E0X
— 0.70 –50
nAd0c.85
0.9 0.92 Volts
MaximumCAovlleercatoger CRuetvoeffrsCeuCrruernretnt at @T A=25℃
Rated DC( VBloCcBk=in–g5V0oVltdacg,eI E = 0)
@T A=125℃
IRMMBT2907
I CBO
0.5 µAdc
— –0.02100
mAmp
MMBT2907A
— –0.010
NOTES:
1- Measur(edVaCtB1=M–H5Z0aVnddca, pIpElie=d0re, vTerAs=e1v2o5lta°Cge)of 4.0 VDC. MMBT2907
— –20
2- Thermal Resistance From Junction to Ambient
MMBT2907A
Base Current( V CE = –30Vdc, V =EB(off) –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
— –10
I B — –50 nAdc
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
201220-1112-06
WILLWAILSLEALSEECLTERCOTRNOICNCICOCROPR. P.
1 page  
WILLAS
FM120-M+
MMBT2907(A)LTHT1RU
1.0AGSeURnFAeCrEaMlOUPNuT SrCpHoOTsTKeY BTArRaRInERsRiEsCtToIFIrERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Feat
• Batch
ures
process
design
,
excellent
po
wer
diss
ipa
SOT-23
tion offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage dr.o1p2.2(3.10)
• High surge capability.
• Guardring for overvoltage protection.
.106(2.70)
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
terminals,.0so8l0de(2ra.b0l4e)per
,
MIL-STD-750
•
Polarity
:
Method
Indicated
2026 .070(1.78)
by cathode band
0.031(0.8) Typ.
.008(0.20)
0.031(0.8) Typ.
.003(0.08)
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RSiantginlegsphaat s2e5℃halfawmabvieen, t6t0e.Hm0z0p,e4rer(as0tius.rt1iev0eu)noMlfeisAnsdXuo.cthtievrewliosaeds.pecified.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
12 13 14 15 16
VRR.0M20(0.2500) 30 40 50 60
VRM.0S12(0.1340) 21 28 35 42
18 10
115 120
80 100 150 200 Volts
56 70 105 140 Volts
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum Average Forward Rectified Current
IO
1.0
Dime nsions in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
RΘJA
CJ
40
120
Operating Temperature Range
TJ -55 to +125
-55 to +150
Amps
Amps
℃/W
PF
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50 0.70
0.85
0.9 0.92 Volts
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
@T A=125℃
IR
0.5
mAmps
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-11
WILLAS ELECTRONIC CORP.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBT2907ALT1.PDF ] | |
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