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PDF MMBT4403 Data sheet ( Hoja de datos )
| Número de pieza | MMBT4403 | |
| Descripción | Switching Transistor PNP Silicon | |
| Fabricantes | WEITRON | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MMBT4403 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Switching Transistor PNP Silicon
M aximum R atings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBT4403
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
Value
-40
-40
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R qJA
PD
R qJA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Device Marking
MMBT4403=2T
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Off Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=-0.1mAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-0.1mAdc, IC=0)
Base Cutoff Current (VCE=-35 Vdc, VEB =-0.4 Vdc)
Collector Cutoff Current (VCE=-35Vdc, VEB=-0.4Vdc)
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width <=300 µS, Duty Cycle <=2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
-40
-40
-5.0
-
-
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Max Unit
- Vdc
- Vdc
- Vdc
-0.1 uAdc
-0.1 uAdc
WEITRON
http://www.weitron.com.tw
1 page  
MMBT4403
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
VCE = 1.0 V
VCE = 10 V
S TAT IC C HA R A C T E R IS T IC S
TJ = 125 C
25 C
- 55 C
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
30
50 70 100
200 300 500
1.0
0.8
0.6
IC = 1.0 mA
0.4
10 mA
100 mA
500 mA
0.2
0
0.005 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0
IB, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
3.0
5.0 7.0 10
20 30
50
1.0 TJ = 25 C
0.8
0.6
0.4
VBE(sat) @ I C/IB= 10
VBE(sat) @ V CE = 10 V
0.2
0
0.1 0.2
VCE(sat)@ I C/IB= 10
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 16. "On" V oltages
500
0.5
0
VC for VCE(sat)
0.5
1.0
1.5
2.0 VS for VBE
2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 17. T emperature Coefficients
WEITRON
http://www.weitron.com.tw
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBT4403.PDF ] | |
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