|
|
|
부품번호 | GA301A 기능 |
|
|
기능 | SILICON CONTROLLED RECTIFIERS | ||
제조업체 | Digitron Semiconductors | ||
로고 | |||
전체 3 페이지수
GA300(A)-GA301(A)
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Repetitive Peak Off State Voltage
Repetitive Peak On-State Current
Peak Gate Current
Average Gate Current
Reverse Gate Current
Reverse Gate Voltage
Storage Temperature Range
Operating Temperature Range
VDRM
ITRM
IGM
IG(AV)
IGR
VGR
GA300
GA300A
60V
Up to 100A
250 mA
25 mA
3 mA
5V
-65 to +150°C
0 to +125°C
GA301
GA301A
100V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Test Symbol Min Typical
Max
Units
Conditions
Delay Time
Rise Time (Note 1)
GA300, GA300A
Rise Time (Note 1)
GA301, GA301A
Circuit Commutated Turn Off Time
GA300, GA301
GA300A, GA301A
td
-
20
10
30
-
ns
tr
-
15
25
25
-
ns
tr
-
10
20
20
-
ns
tq
-
0.8 2.0
µs
0.3 0.5
IG = 20 mA, IT = 1 A
IG = 30 mA, IT = 1A
VD = 60 V, IT = 1 A
VD = 60 V, IT = 30 A (Note 1)
VD = 100 V, IT = 1A
VD = 100 V, IT = 30 A (Note 1)
IT = 1 A, IR = 1 A, RGK = 1K
Gate Trigger On Pulse Width
tpg(on)
-
0.02 0.05
µs
IG = 10 mA, IT = 1 A
Off-State Current
Reverse Current (Note 2)
IDRM
-
-
0.01 0.1
20 100
µA
VDRM = Rating, RGK = 1K, T = 25°C
VDRM = Rating, RGK = 1K, T = 125°C
IRRM - 1.0 10 mA
VRRM = 30 V, RGK = 1 K (Note 2)
Gate Trigger Voltage
VGT
0.4
0.10
0.6
0.2
0.75
-
V
VD = 5V, RGS = 100 Ω, T = 25°C
VD = 5 V, RGS = 100 Ω, T = 125°C
Gate Trigger Current
IGT - 10 200 µA
VD = 5 V, RGS = 10 K
On-State Voltage
VT
-
1.1 1.5
V
IT = 2 A
Off-State Voltage – Critical Rate of Rise
dV/dt
15
30
- V/µs
VD = 30 V, RGK = 1 K
Reverse Gate Current
IGR
-
0.01 0.1
mA
VGR = 5 V
Holding Current
IH
0.3 2.0
0.05 0.4
5.0
-
mA
VD = 5V, RGK = 1 K, T = 25°C
VD = 5 V, RGK = 1 K, T = 125°C
Note 1 – IG = 10 mA, Pulse Test: Duty Cycle < 1%.
Note 2 – Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous basis.
Rev. 20130116
| |||
구 성 | 총 3 페이지수 | ||
다운로드 | [ GA301A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
GA301 | SCRs Commercial Nanosecond Switching Planar | Microsemi Corporation |
GA301 | SILICON CONTROLLED RECTIFIERS | Digitron Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |