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MCR16NG 데이터시트 PDF




Littelfuse에서 제조한 전자 부품 MCR16NG은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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기능 Silicon Controlled Rectifiers
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MCR16NG 데이터시트, 핀배열, 회로
MCR16NG
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
Blocking Voltage to 800 Volts
On−State Current Rating of 16 Amperes RMS
High Surge Current Capability − 160 Amperes
Rugged Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design
High Immunity to dv/dt − 100 V/msec Minimum at 125°C
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR16NG
VDRM,
VRRM
800
Unit
V
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
IT(RMS)
ITSM
I2t
16 A
160 A
106 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM 5.0 W
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width 1.0 ms, TC = 80°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
Littelfuse.com
SCRs
16 AMPERES RMS
800 VOLTS
G
AK
MARKING
DIAGRAM
123
TO−220AB
CASE 221A−09
STYLE 3
AY WW
MCR16NG
AKA
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR16NG
TO−220AB
(Pb−Free)
50 Units / Rail
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 5
1
Publication Order Number:
MCR16/D




MCR16NG pdf, 반도체, 판매, 대치품
MCR16NG
100
10
1
-40 -25 -10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Latching Current versus
Junction Temperature
30
25
20
15
10
5
0
-40 -25 -10 5 20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110 125
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
160
1 Cycle
150
140
130
120
110
TJ = 125°C f = 60 Hz
100
90
1 2 3 4 5 6 7 8 9 10
NUMBER OF CYCLES
Figure 9. Maximum Non−Repetitive
Surge Current
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 5
4
Publication Order Number:
MCR16/D

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