|
|
|
부품번호 | MCR16NG 기능 |
|
|
기능 | Silicon Controlled Rectifiers | ||
제조업체 | Littelfuse | ||
로고 | |||
전체 5 페이지수
MCR16NG
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
• Blocking Voltage to 800 Volts
• On−State Current Rating of 16 Amperes RMS
• High Surge Current Capability − 160 Amperes
• Rugged Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR16NG
VDRM,
VRRM
800
Unit
V
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
IT(RMS)
ITSM
I2t
16 A
160 A
106 A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM 5.0 W
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TC = 80°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
Littelfuse.com
SCRs
16 AMPERES RMS
800 VOLTS
G
AK
MARKING
DIAGRAM
123
TO−220AB
CASE 221A−09
STYLE 3
AY WW
MCR16NG
AKA
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR16NG
TO−220AB
(Pb−Free)
50 Units / Rail
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 5
1
Publication Order Number:
MCR16/D
MCR16NG
100
10
1
-40 -25 -10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Latching Current versus
Junction Temperature
30
25
20
15
10
5
0
-40 -25 -10 5 20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110 125
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
160
1 Cycle
150
140
130
120
110
TJ = 125°C f = 60 Hz
100
90
1 2 3 4 5 6 7 8 9 10
NUMBER OF CYCLES
Figure 9. Maximum Non−Repetitive
Surge Current
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 5
4
Publication Order Number:
MCR16/D
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ MCR16NG.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MCR16N | Silicon Controlled Rectifiers | Motorola Semiconductors |
MCR16N | SILICON CONTROLLED RECTIFIERS | Digitron Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |