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PDF MCR16N Data sheet ( Hoja de datos )
| Número de pieza | MCR16N | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MCR16N (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MCR16N
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, sine wave, 50 to 60Hz, gate open)
On-state RMS current (180° conduction angles, TC = 80°C)
VDRM
VRRM
IT(RMS)
800
16
V
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 125°C)
Circuit fusing consideration (t = 8.3ms)
ITSM 160
A
I2t 106 A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C)
PGM 5.0
W
Forward average gate power (t = 8.3ms, TC = 80°C)
PG(AV)
0.5
W
Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C)
IGM 2.0
A
Operating temperature range
TJ -40 to +125 °C
Storage temperature range
Tstg -40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Maximum lead temperature for soldering purposes
1/8” from case for 10s
Symbol
RӨJC
RӨJA
TL
Maximum
1.5
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak on-state voltage*
(ITM = 32A)
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
VTM
IGT
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
VGT
Holding current
(VD = 12V, gate open, initiating current = 200mA)
IH
Latch current
(VD = 12V, Ig = 20mA)
IL
Min Typ Max Unit
- - 0.01
- - 2.0
- - 1.7
2.0 10
20
0.5 0.65 1.0
4.0 25
40
- 30 60
mA
V
mA
V
mA
mA
Rev. 20130108
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MCR16N.PDF ] | |
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