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PDF BZW06-9V4 Data sheet ( Hoja de datos )

Número de pieza BZW06-9V4
Descripción Unidirectional and bidirectional Transient Voltage Suppressor Diodes
Fabricantes Diotec Semiconductor 
Logotipo Diotec Semiconductor Logotipo



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BZW06-5V8/376
® BZW06-5V8B/376B
FEATURES
PEAK PULSE POWER : 600 W (10/1000µs)
STAND-OFF VOLTAGERANGE :
From 5.8V to 376 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
TRANSILTM
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
F126
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
PPP Peak pulse power dissipation (see note 1) Tj initial = Tamb
600
W
P Power dissipation on infinite heatsink
Tamb = 75°C
1.7 W
IFSM Non repetitive surge peak forward current tp = 10ms
100 A
for unidirectional types
Tj initial = Tamb
Tstg Storage temperature range
Tj Maximum junction temperature
- 65 to + 175
175
°C
°C
TL Maximum lead temperature for soldering during 10s a 5mm
from case.
230 °C
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Rth (j-l)
Rth (j-a)
Parameter
Junction to leads
Junction to ambient on printed circuit.
Llead = 10 mm
Value
60
100
Unit
°C/W
°C/W
January 1998 Ed : 2
1/6

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BZW06-9V4 pdf
Fig. 4a : Capacitance versus reverse applied
voltage for unidirectional types (typical values).
BZW06-xx
Fig. 4b : Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Fig.5 : Peakforward voltagedrop versuspeakforward
current (typical values for unidirectional types).
Note : Multiply by 2 for units with VBR > 220V.
Fig. 6 : Transientthermalimpedance junctionambi-
entversus pulse duration (For FR4 PC Board
with L lead = 10mm).
Fig. 7 : Relative variation of leakage current
versus junction temperature.
®
5/6

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