|
|
|
부품번호 | BZT52C15-V 기능 |
|
|
기능 | Small Signal Zener Diodes | ||
제조업체 | Vishay | ||
로고 | |||
전체 8 페이지수
Small Signal Zener Diodes
BZT52-V-Series
Vishay Semiconductors
Features
• Silicon planar power zener diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23
series and the dual zener diode common cathode
configuration in the SOT-23 case with type
designation DZ23 series.
• The zener voltages are graded according to the
international E 24 standard.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18/10 k per 13 " reel (8 mm tape), 10 k/box
GS08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Zener current see table
" Characteristics "
Power dissipation
Power dissipation
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1) Valid provided that electrodes are kept at ambient temperature
Symbol
Ptot
Ptot
Symbol
RthJA
TJ
TS
17431
Value
500 2)
410 1)
Unit
mW
mW
Value
300 1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
www.vishay.com
1
BZT52-V-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
mA
103
102
IF 10
1
TJ = 100 °C
10-1
TJ = 25 °C
10-2
10-3
10-4
10-5
0
18114
0.2 0.4 0.6 0.8
VF
Figure 1. Forward characteristics
1V
1000
5
4
3
rzj 2
100
5
4
3
2
TJ = 25 °C
100
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
IZ
2.7
3.6
4.7
5.1
5.6
5 100 mA
Figure 4. Dynamic Resistance vs. Zener Current
mW
500
400
Ptot
300
200
100
0
0
18888
100
Tamb
200 °C
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
pF
1000
7
Ctot
5
4
3
VR = 1 V
2
V =2V
R
TJ = 25 °C
100
7 V =1V
R
5
4
VR = 2 V
3
2
10
1
18118
2 3 45
10 2 3 4 5 100 V
V at I = 5 mA
ZZ
Figure 5. Capacitance vs. Zener Voltage
°C/W
103
7
RthA
5
4
3
2
0.5
102 0.2
7 0.1
5
4 0.05
3 0.02
2 0.01
10
7
5
4
3
2
V=0
1
10-5 10-4
10-3
18116
tp tp
T
T
10-2 10-1
tp
PI
1 10s
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Ω
100
5
4
rzj
3
2
10
TJ = 25 °C
33
27
22
18
5
4
3
2
1
0.1
18119
2
51 2
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
www.vishay.com
4
4페이지 BZT52-V-Series
Vishay Semiconductors
18157
Figure 18. Breakdown Characteristics
Package Dimensions in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
2.5 (0.098)
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
www.vishay.com
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ BZT52C15-V.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BZT52C15-F | 410mW Two Terminals SMD Zener Diodes | TAITRON |
BZT52C15-G | Zener Voltage Tolerance Zener Diode | Taiwan Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |